Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties

Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties

Exploiting CVD technique for carbon deposition from C₂H₂+H₂+N₂ mixture, a graphene-like film synthesized directly on SiO₂ surface of SiO₂-Si structure was obtained. The graphene-like film was grown under thin Ni layer that is easy exfoliated from graphene-SiO₂-Si structure. Surface of the film was s...

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Збережено в:
Бібліографічні деталі
Дата:2016
Автори: Bortchagovsky, E.G., Vasin, A.V., Lytvyn, P.M., Tiagulskyi, S.I., Slobodian, A.M., Verovsky, I.N., Strelchuk, V.V., Stubrov, Yu., Nazarov, A.N.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121652
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties / E.G. Bortchagovsky, A.V. Vasin, P.M. Lytvyn, S.I. Tiagulskyi, A.M. Slobodian, I.N. Verovsky, V.V. Strelchuk, Yu. Stubrov, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 328-333. — Бібліогр.: 19 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1216522017-06-16T03:02:33Z Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties Bortchagovsky, E.G. Vasin, A.V. Lytvyn, P.M. Tiagulskyi, S.I. Slobodian, A.M. Verovsky, I.N. Strelchuk, V.V. Stubrov, Yu. Nazarov, A.N. Exploiting CVD technique for carbon deposition from C₂H₂+H₂+N₂ mixture, a graphene-like film synthesized directly on SiO₂ surface of SiO₂-Si structure was obtained. The graphene-like film was grown under thin Ni layer that is easy exfoliated from graphene-SiO₂-Si structure. Surface of the film was sufficiently smooth and reveals no winkles and holes; it has a good homogeneity and perfect adhesion to SiO₂ layer. Studying the micro-Raman spectra showed a graphene-like structure of the film; using atomic force microscopic technique, the thickness of film was determined (0.6 nm). Using spectroscopic ellipsometry and simple Cauchy model enabled us to estimate optical parameters of this graphene-like film. 2016 Article Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties / E.G. Bortchagovsky, A.V. Vasin, P.M. Lytvyn, S.I. Tiagulskyi, A.M. Slobodian, I.N. Verovsky, V.V. Strelchuk, Yu. Stubrov, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 328-333. — Бібліогр.: 19 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.04.328 PACS 68.65.Pq, 78.67.Wj http://dspace.nbuv.gov.ua/handle/123456789/121652 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Exploiting CVD technique for carbon deposition from C₂H₂+H₂+N₂ mixture, a graphene-like film synthesized directly on SiO₂ surface of SiO₂-Si structure was obtained. The graphene-like film was grown under thin Ni layer that is easy exfoliated from graphene-SiO₂-Si structure. Surface of the film was sufficiently smooth and reveals no winkles and holes; it has a good homogeneity and perfect adhesion to SiO₂ layer. Studying the micro-Raman spectra showed a graphene-like structure of the film; using atomic force microscopic technique, the thickness of film was determined (0.6 nm). Using spectroscopic ellipsometry and simple Cauchy model enabled us to estimate optical parameters of this graphene-like film.
format Article
author Bortchagovsky, E.G.
Vasin, A.V.
Lytvyn, P.M.
Tiagulskyi, S.I.
Slobodian, A.M.
Verovsky, I.N.
Strelchuk, V.V.
Stubrov, Yu.
Nazarov, A.N.
spellingShingle Bortchagovsky, E.G.
Vasin, A.V.
Lytvyn, P.M.
Tiagulskyi, S.I.
Slobodian, A.M.
Verovsky, I.N.
Strelchuk, V.V.
Stubrov, Yu.
Nazarov, A.N.
Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Bortchagovsky, E.G.
Vasin, A.V.
Lytvyn, P.M.
Tiagulskyi, S.I.
Slobodian, A.M.
Verovsky, I.N.
Strelchuk, V.V.
Stubrov, Yu.
Nazarov, A.N.
author_sort Bortchagovsky, E.G.
title Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties
title_short Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties
title_full Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties
title_fullStr Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties
title_full_unstemmed Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties
title_sort direct synthesized graphene-like film on sio₂: mechanical and optical properties
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2016
url http://dspace.nbuv.gov.ua/handle/123456789/121652
citation_txt Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties / E.G. Bortchagovsky, A.V. Vasin, P.M. Lytvyn, S.I. Tiagulskyi, A.M. Slobodian, I.N. Verovsky, V.V. Strelchuk, Yu. Stubrov, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 328-333. — Бібліогр.: 19 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:39:59Z
last_indexed 2023-10-18T20:39:59Z
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