Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The...

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Видавець:Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Дата:2015
Автори: Charikova, T., Okulov, V., Gubkin, A., Lugovikh, A., Moiseev, K., Nevedomsky, V., Kudriavtsev, Yu., Gallardo, S., Lopez, M.
Формат: Стаття
Мова:English
Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2015
Назва видання:Физика низких температур
Теми:
XX Уральская международная зимняя школа по физике полупроводников
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/122039
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Цитувати:Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese / T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavtsev, S. Gallardo, M. Lopez // Физика низких температур. — 2015. — Т. 41, № 2. — С. 207-209. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-122039
record_format dspace
spelling irk-123456789-1220392017-06-27T03:03:18Z Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese Charikova, T. Okulov, V. Gubkin, A. Lugovikh, A. Moiseev, K. Nevedomsky, V. Kudriavtsev, Yu. Gallardo, S. Lopez, M. XX Уральская международная зимняя школа по физике полупроводников The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga₀.₈₄In₀.₁₆As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found. 2015 Article Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese / T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavtsev, S. Gallardo, M. Lopez // Физика низких температур. — 2015. — Т. 41, № 2. — С. 207-209. — Бібліогр.: 9 назв. — англ. 0132-6414 PACS: 72.80.Ey, 75.50.Pp http://dspace.nbuv.gov.ua/handle/123456789/122039 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic XX Уральская международная зимняя школа по физике полупроводников
XX Уральская международная зимняя школа по физике полупроводников
spellingShingle XX Уральская международная зимняя школа по физике полупроводников
XX Уральская международная зимняя школа по физике полупроводников
Charikova, T.
Okulov, V.
Gubkin, A.
Lugovikh, A.
Moiseev, K.
Nevedomsky, V.
Kudriavtsev, Yu.
Gallardo, S.
Lopez, M.
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
Физика низких температур
description The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga₀.₈₄In₀.₁₆As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.
format Article
author Charikova, T.
Okulov, V.
Gubkin, A.
Lugovikh, A.
Moiseev, K.
Nevedomsky, V.
Kudriavtsev, Yu.
Gallardo, S.
Lopez, M.
author_facet Charikova, T.
Okulov, V.
Gubkin, A.
Lugovikh, A.
Moiseev, K.
Nevedomsky, V.
Kudriavtsev, Yu.
Gallardo, S.
Lopez, M.
author_sort Charikova, T.
title Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
title_short Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
title_full Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
title_fullStr Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
title_full_unstemmed Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
title_sort magnetization in aiiibv semiconductor heterostructures with the depletion layer of manganese
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
publishDate 2015
topic_facet XX Уральская международная зимняя школа по физике полупроводников
url http://dspace.nbuv.gov.ua/handle/123456789/122039
citation_txt Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese / T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavtsev, S. Gallardo, M. Lopez // Физика низких температур. — 2015. — Т. 41, № 2. — С. 207-209. — Бібліогр.: 9 назв. — англ.
series Физика низких температур
work_keys_str_mv AT charikovat magnetizationinaiiibvsemiconductorheterostructureswiththedepletionlayerofmanganese
AT okulovv magnetizationinaiiibvsemiconductorheterostructureswiththedepletionlayerofmanganese
AT gubkina magnetizationinaiiibvsemiconductorheterostructureswiththedepletionlayerofmanganese
AT lugovikha magnetizationinaiiibvsemiconductorheterostructureswiththedepletionlayerofmanganese
AT moiseevk magnetizationinaiiibvsemiconductorheterostructureswiththedepletionlayerofmanganese
AT nevedomskyv magnetizationinaiiibvsemiconductorheterostructureswiththedepletionlayerofmanganese
AT kudriavtsevyu magnetizationinaiiibvsemiconductorheterostructureswiththedepletionlayerofmanganese
AT gallardos magnetizationinaiiibvsemiconductorheterostructureswiththedepletionlayerofmanganese
AT lopezm magnetizationinaiiibvsemiconductorheterostructureswiththedepletionlayerofmanganese
first_indexed 2023-10-18T20:40:56Z
last_indexed 2023-10-18T20:40:56Z
_version_ 1796150835488489472

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