Intrinsic stresses in multi-component nitride coatings produced by plasma immersion ion implantation
In model of nonlocal thermoelastic peak of low energy ion the process of intrinsic stress formation in the multi-component coatings CrN, Cr₀.₅Al₀.₅ N, TiN, Ti₀.₅Al₀.₅N, deposited by vacuum arc method from ion beams Cr⁺, Cr⁺₀.₅Al⁺₀.₅, Ti⁺, Ti⁺₀.₅Al⁺₀.₅ in direct current (DC) and pulsed potential mode...
Збережено в:
Дата: | 2017 |
---|---|
Автори: | , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2017
|
Назва видання: | Вопросы атомной науки и техники |
Теми: | |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/122176 |
Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Intrinsic stresses in multi-component nitride coatings produced by plasma immersion ion implantation / A.I. Kalinichenko, S.S. Perepelkin, V.E. Strel’nitskij // Вопросы атомной науки и техники. — 2017. — № 1. — С. 203-206. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of UkraineРезюме: | In model of nonlocal thermoelastic peak of low energy ion the process of intrinsic stress formation in the multi-component coatings CrN, Cr₀.₅Al₀.₅ N, TiN, Ti₀.₅Al₀.₅N, deposited by vacuum arc method from ion beams Cr⁺, Cr⁺₀.₅Al⁺₀.₅, Ti⁺, Ti⁺₀.₅Al⁺₀.₅ in direct current (DC) and pulsed potential modes is investigated. The calculations of the intrinsic stress σ in the coatings depending on bias potential U at different deposition regimes and temperatures are carried out. It has been shown that growth of Al ion content in the mixed beam of incident ions increases stress σ(U) in the deposited coating whereas growth of deposition temperature decreases it. Transition from the DC mode of deposition to the pulsed potential one leads to reduction of intrinsic stress maximum and shifts it in area of higher potentials. Comparison of theoretical results with experimental data permits estimating value of activation energy of defect migration. |
---|