Vertical spin transport in semiconductor heterostructures
The Landauer—B ttiker formalism combined with the tight-binding transfer matrix method is employed to model vertical coherent spin transport within magnetization modulated semiconductor heterostructures based on GaAs. This formalism provides excellent physical description of recent experiments co...
Збережено в:
| Дата: | 2007 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2007
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/127727 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Vertical spin transport in semiconductor heterostructures / P. Sankowski, P. Kacman, J.A. Majewski, T. Dietl // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 256-262. — Бібліогр.: 34 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The Landauer—B ttiker formalism combined with the tight-binding transfer matrix method is
employed to model vertical coherent spin transport within magnetization modulated semiconductor
heterostructures based on GaAs. This formalism provides excellent physical description of recent
experiments concerning the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based
trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. For both the
TMR and the Zener spin current polarization, the calculated values compare well with those observed
in the experiments and the formalism reproduces the strong decrease of the observed effects
with external bias. We ascribe this decrease to the band structure effects. The role played in the
spin dependent tunneling by carrier concentration and magnetic ion content is also studied. |
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