Vertical spin transport in semiconductor heterostructures
The Landauer—B ttiker formalism combined with the tight-binding transfer matrix method is employed to model vertical coherent spin transport within magnetization modulated semiconductor heterostructures based on GaAs. This formalism provides excellent physical description of recent experiments co...
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| Дата: | 2007 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2007
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/127727 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Vertical spin transport in semiconductor heterostructures / P. Sankowski, P. Kacman, J.A. Majewski, T. Dietl // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 256-262. — Бібліогр.: 34 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-127727 |
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dspace |
| spelling |
irk-123456789-1277272017-12-28T03:02:34Z Vertical spin transport in semiconductor heterostructures Sankowski, P. Kacman, P. Majewski, J.A. Dietl, T. Структура и свойства полупроводников с переходными элементами The Landauer—B ttiker formalism combined with the tight-binding transfer matrix method is employed to model vertical coherent spin transport within magnetization modulated semiconductor heterostructures based on GaAs. This formalism provides excellent physical description of recent experiments concerning the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. For both the TMR and the Zener spin current polarization, the calculated values compare well with those observed in the experiments and the formalism reproduces the strong decrease of the observed effects with external bias. We ascribe this decrease to the band structure effects. The role played in the spin dependent tunneling by carrier concentration and magnetic ion content is also studied. 2007 Article Vertical spin transport in semiconductor heterostructures / P. Sankowski, P. Kacman, J.A. Majewski, T. Dietl // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 256-262. — Бібліогр.: 34 назв. — англ. 0132-6414 PACS: 75.50.Pp, 72.25.Hg, 73.40.Gk http://dspace.nbuv.gov.ua/handle/123456789/127727 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Структура и свойства полупроводников с переходными элементами Структура и свойства полупроводников с переходными элементами |
| spellingShingle |
Структура и свойства полупроводников с переходными элементами Структура и свойства полупроводников с переходными элементами Sankowski, P. Kacman, P. Majewski, J.A. Dietl, T. Vertical spin transport in semiconductor heterostructures Физика низких температур |
| description |
The Landauer—B ttiker formalism combined with the tight-binding transfer matrix method is
employed to model vertical coherent spin transport within magnetization modulated semiconductor
heterostructures based on GaAs. This formalism provides excellent physical description of recent
experiments concerning the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based
trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. For both the
TMR and the Zener spin current polarization, the calculated values compare well with those observed
in the experiments and the formalism reproduces the strong decrease of the observed effects
with external bias. We ascribe this decrease to the band structure effects. The role played in the
spin dependent tunneling by carrier concentration and magnetic ion content is also studied. |
| format |
Article |
| author |
Sankowski, P. Kacman, P. Majewski, J.A. Dietl, T. |
| author_facet |
Sankowski, P. Kacman, P. Majewski, J.A. Dietl, T. |
| author_sort |
Sankowski, P. |
| title |
Vertical spin transport in semiconductor heterostructures |
| title_short |
Vertical spin transport in semiconductor heterostructures |
| title_full |
Vertical spin transport in semiconductor heterostructures |
| title_fullStr |
Vertical spin transport in semiconductor heterostructures |
| title_full_unstemmed |
Vertical spin transport in semiconductor heterostructures |
| title_sort |
vertical spin transport in semiconductor heterostructures |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2007 |
| topic_facet |
Структура и свойства полупроводников с переходными элементами |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/127727 |
| citation_txt |
Vertical spin transport in semiconductor heterostructures / P. Sankowski, P. Kacman, J.A. Majewski, T. Dietl // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 256-262. — Бібліогр.: 34 назв. — англ. |
| series |
Физика низких температур |
| work_keys_str_mv |
AT sankowskip verticalspintransportinsemiconductorheterostructures AT kacmanp verticalspintransportinsemiconductorheterostructures AT majewskija verticalspintransportinsemiconductorheterostructures AT dietlt verticalspintransportinsemiconductorheterostructures |
| first_indexed |
2023-10-18T20:53:44Z |
| last_indexed |
2023-10-18T20:53:44Z |
| _version_ |
1796151389487890432 |