Plasma wave resonant detection of terahertz radiations by nanometric transistors
We report on resonant terahertz detection by two-dimensional electron plasma located in nanometric InGaAs and GaN transistors. Up to now, the biggest part of the research was devoted to GaAs-based devices as the most promising from the point of view of the electron mobility. The resonant detectio...
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| Дата: | 2007 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2007
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| Назва видання: | Физика низких температур |
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| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/127738 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Plasma wave resonant detection of terahertz radiations by nanometric transistors / W. Knap, A. El Fatimy, J. Torres, F. Teppe, M. Orlov, V. Gavrilenko // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 388-391. — Бібліогр.: 18 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1277382017-12-28T03:02:51Z Plasma wave resonant detection of terahertz radiations by nanometric transistors Knap, W. El Fatimy, A. Torres, J. Teppe, F. Orlov, M. Gavrilenko, V. Новые электронные материалы и системы We report on resonant terahertz detection by two-dimensional electron plasma located in nanometric InGaAs and GaN transistors. Up to now, the biggest part of the research was devoted to GaAs-based devices as the most promising from the point of view of the electron mobility. The resonant detection was reported, however, only in the sub-THz range. According to predictions of the Dyakonov–Shur plasma wave detection theory an increase of the detection frequency can be achieved by reducing the length or increase the carrier density in the gated region.We demonstrate that the 1THz limit can be overcome by using ultimately short gate InGaAs and GaN nanotransistors. For the first time the tunability of the resonant signal by the applied gate voltage is demonstrated. We show that the physical mechanism of the detection is related to the plasma waves excited in the transistor channel (Dyakonov–Shur theory). We also show that by increasing of the drain-to-source current leads to a transformation of the broadband detection to a resonant and tuneable one. We can get resonant detection at room temperature. We finally discuss the possible application of detection by nanotransistors in different types of THz spectroscopy research. 2007 Article Plasma wave resonant detection of terahertz radiations by nanometric transistors / W. Knap, A. El Fatimy, J. Torres, F. Teppe, M. Orlov, V. Gavrilenko // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 388-391. — Бібліогр.: 18 назв. — англ. 0132-6414 PACS: 73.21.–b, 73.22.–f, 73.23.Ad, 73.50.Fq http://dspace.nbuv.gov.ua/handle/123456789/127738 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Новые электронные материалы и системы Новые электронные материалы и системы |
| spellingShingle |
Новые электронные материалы и системы Новые электронные материалы и системы Knap, W. El Fatimy, A. Torres, J. Teppe, F. Orlov, M. Gavrilenko, V. Plasma wave resonant detection of terahertz radiations by nanometric transistors Физика низких температур |
| description |
We report on resonant terahertz detection by two-dimensional electron plasma located in
nanometric InGaAs and GaN transistors. Up to now, the biggest part of the research was devoted
to GaAs-based devices as the most promising from the point of view of the electron mobility. The
resonant detection was reported, however, only in the sub-THz range. According to predictions of
the Dyakonov–Shur plasma wave detection theory an increase of the detection frequency can be
achieved by reducing the length or increase the carrier density in the gated region.We demonstrate
that the 1THz limit can be overcome by using ultimately short gate InGaAs and GaN nanotransistors.
For the first time the tunability of the resonant signal by the applied gate voltage is
demonstrated. We show that the physical mechanism of the detection is related to the plasma
waves excited in the transistor channel (Dyakonov–Shur theory). We also show that by increasing
of the drain-to-source current leads to a transformation of the broadband detection to a resonant
and tuneable one. We can get resonant detection at room temperature. We finally discuss the possible
application of detection by nanotransistors in different types of THz spectroscopy research. |
| format |
Article |
| author |
Knap, W. El Fatimy, A. Torres, J. Teppe, F. Orlov, M. Gavrilenko, V. |
| author_facet |
Knap, W. El Fatimy, A. Torres, J. Teppe, F. Orlov, M. Gavrilenko, V. |
| author_sort |
Knap, W. |
| title |
Plasma wave resonant detection of terahertz radiations by nanometric transistors |
| title_short |
Plasma wave resonant detection of terahertz radiations by nanometric transistors |
| title_full |
Plasma wave resonant detection of terahertz radiations by nanometric transistors |
| title_fullStr |
Plasma wave resonant detection of terahertz radiations by nanometric transistors |
| title_full_unstemmed |
Plasma wave resonant detection of terahertz radiations by nanometric transistors |
| title_sort |
plasma wave resonant detection of terahertz radiations by nanometric transistors |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2007 |
| topic_facet |
Новые электронные материалы и системы |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/127738 |
| citation_txt |
Plasma wave resonant detection of terahertz radiations by nanometric transistors / W. Knap, A. El Fatimy, J. Torres, F. Teppe, M. Orlov, V. Gavrilenko // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 388-391. — Бібліогр.: 18 назв. — англ. |
| series |
Физика низких температур |
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2023-10-18T20:53:46Z |
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2023-10-18T20:53:46Z |
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