Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001)
Electron stimulated desorption ion angular distribution (ESDIAD) and temperature programmed desorption (TPD) techniques have been employed to study radiation-induced decomposition of fractional monolayer SF₆ films physisorbed on Ru(0001) at 25 K. Our focus is on the origin of F⁺ and F⁻ ions, which d...
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Дата: | 2003 |
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Автори: | , , , |
Формат: | Стаття |
Мова: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2003
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Назва видання: | Физика низких температур |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) / N.S. Faradzhev, D.O. Kusmierek, B.V. Yakshinskiy, T.E. Madey // Физика низких температур. — 2003. — Т. 29, № 3. — С. 286-295. — Бібліогр.: 34 назв. — англ. |
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irk-123456789-1288172018-01-15T03:03:51Z Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) Faradzhev, N.S. Kusmierek, D.O. Yakshinskiy, B.V. Madey, T.E. Electronically Induced Phenomena: Low Temperature Aspects Electron stimulated desorption ion angular distribution (ESDIAD) and temperature programmed desorption (TPD) techniques have been employed to study radiation-induced decomposition of fractional monolayer SF₆ films physisorbed on Ru(0001) at 25 K. Our focus is on the origin of F⁺ and F⁻ ions, which dominate ESD from fractional monolayers. F⁻ ions escape only in off-normal directions and originate from undissociated molecules. The origins of F⁺ ions are more complicated. The F⁺ ions from electron stimulated desorption of molecularly adsorbed SF₆ desorb in off-normal directions, in symmetric ESDIAD patterns. Electron beam exposure leads to formation of SFx (x = 0 - 5) fragments, which become the source of positive ions in normal and off-normal directions. Electron exposure > 10¹⁶ cm⁻ ² results in decomposition of the entire adsorbed SF₆ layer. 2003 Article Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) / N.S. Faradzhev, D.O. Kusmierek, B.V. Yakshinskiy, T.E. Madey // Физика низких температур. — 2003. — Т. 29, № 3. — С. 286-295. — Бібліогр.: 34 назв. — англ. 0132-6414 PACS: 79.20.La http://dspace.nbuv.gov.ua/handle/123456789/128817 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
topic |
Electronically Induced Phenomena: Low Temperature Aspects Electronically Induced Phenomena: Low Temperature Aspects |
spellingShingle |
Electronically Induced Phenomena: Low Temperature Aspects Electronically Induced Phenomena: Low Temperature Aspects Faradzhev, N.S. Kusmierek, D.O. Yakshinskiy, B.V. Madey, T.E. Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) Физика низких температур |
description |
Electron stimulated desorption ion angular distribution (ESDIAD) and temperature programmed desorption (TPD) techniques have been employed to study radiation-induced decomposition of fractional monolayer SF₆ films physisorbed on Ru(0001) at 25 K. Our focus is on the origin of F⁺ and F⁻ ions, which dominate ESD from fractional monolayers. F⁻ ions escape only in off-normal directions and originate from undissociated molecules. The origins of F⁺ ions are more complicated. The F⁺ ions from electron stimulated desorption of molecularly adsorbed SF₆ desorb in off-normal directions, in symmetric ESDIAD patterns. Electron beam exposure leads to formation of SFx (x = 0 - 5) fragments, which become the source of positive ions in normal and off-normal directions. Electron exposure > 10¹⁶ cm⁻ ² results in decomposition of the entire adsorbed SF₆ layer. |
format |
Article |
author |
Faradzhev, N.S. Kusmierek, D.O. Yakshinskiy, B.V. Madey, T.E. |
author_facet |
Faradzhev, N.S. Kusmierek, D.O. Yakshinskiy, B.V. Madey, T.E. |
author_sort |
Faradzhev, N.S. |
title |
Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) |
title_short |
Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) |
title_full |
Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) |
title_fullStr |
Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) |
title_full_unstemmed |
Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) |
title_sort |
effects of electron irradiation on structure and bonding of sf₆ on ru(0001) |
publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
publishDate |
2003 |
topic_facet |
Electronically Induced Phenomena: Low Temperature Aspects |
url |
http://dspace.nbuv.gov.ua/handle/123456789/128817 |
citation_txt |
Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) / N.S. Faradzhev, D.O. Kusmierek, B.V. Yakshinskiy, T.E. Madey // Физика низких температур. — 2003. — Т. 29, № 3. — С. 286-295. — Бібліогр.: 34 назв. — англ. |
series |
Физика низких температур |
work_keys_str_mv |
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first_indexed |
2023-10-18T20:56:11Z |
last_indexed |
2023-10-18T20:56:11Z |
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1796151495985463296 |