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Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance
The rare-earth Kondo semiconductor CeNiSn is investigated by point-contact and tunneling spectroscopy using mechanically controllable break junctions. I(V) characteristics and their derivatives are recorded for contacts from the metallic to the tunneling regime at temperatures between 0.1–8 K and in...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2000
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| Series: | Физика низких температур |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/129106 |
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