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Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance
The rare-earth Kondo semiconductor CeNiSn is investigated by point-contact and tunneling spectroscopy using mechanically controllable break junctions. I(V) characteristics and their derivatives are recorded for contacts from the metallic to the tunneling regime at temperatures between 0.1–8 K and in...
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Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2000
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Series: | Физика низких температур |
Subjects: | |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/129106 |
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Summary: | The rare-earth Kondo semiconductor CeNiSn is investigated by point-contact and tunneling spectroscopy using mechanically controllable break junctions. I(V) characteristics and their derivatives are recorded for contacts from the metallic to the tunneling regime at temperatures between 0.1–8 K and in magnetic fields up to 8 T. It is found that CeNiSn behaves like a compound with typical metallic properties instead of exhibiting the expected semiconducting behavior. The main spectral feature is a pronounced zero-bias conductance minimum of about 10 meV width, which appears to be of magnetic nature. These break-junction experiments provide no clear-cut evidence for an energy (pseudo) gap in CeNiSn. |
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