Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance
The rare-earth Kondo semiconductor CeNiSn is investigated by point-contact and tunneling spectroscopy using mechanically controllable break junctions. I(V) characteristics and their derivatives are recorded for contacts from the metallic to the tunneling regime at temperatures between 0.1–8 K and in...
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| Дата: | 2000 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2000
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/129106 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance / Yu.G. Naidyuk, K. Gloos, T. Takabatake // Физика низких температур. — 2000. — Т. 26, № 7. — С. 687-693. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-129106 |
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dspace |
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irk-123456789-1291062018-01-17T03:03:18Z Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance Naidyuk, Yu.G. Gloos, K. Takabatake, T. Электpонные свойства металлов и сплавов The rare-earth Kondo semiconductor CeNiSn is investigated by point-contact and tunneling spectroscopy using mechanically controllable break junctions. I(V) characteristics and their derivatives are recorded for contacts from the metallic to the tunneling regime at temperatures between 0.1–8 K and in magnetic fields up to 8 T. It is found that CeNiSn behaves like a compound with typical metallic properties instead of exhibiting the expected semiconducting behavior. The main spectral feature is a pronounced zero-bias conductance minimum of about 10 meV width, which appears to be of magnetic nature. These break-junction experiments provide no clear-cut evidence for an energy (pseudo) gap in CeNiSn. 2000 Article Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance / Yu.G. Naidyuk, K. Gloos, T. Takabatake // Физика низких температур. — 2000. — Т. 26, № 7. — С. 687-693. — Бібліогр.: 14 назв. — англ. 0132-6414 PACS: 71.27.+a, 73.40.Jn, 75.30.Mb http://dspace.nbuv.gov.ua/handle/123456789/129106 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Электpонные свойства металлов и сплавов Электpонные свойства металлов и сплавов |
| spellingShingle |
Электpонные свойства металлов и сплавов Электpонные свойства металлов и сплавов Naidyuk, Yu.G. Gloos, K. Takabatake, T. Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance Физика низких температур |
| description |
The rare-earth Kondo semiconductor CeNiSn is investigated by point-contact and tunneling spectroscopy using mechanically controllable break junctions. I(V) characteristics and their derivatives are recorded for contacts from the metallic to the tunneling regime at temperatures between 0.1–8 K and in magnetic fields up to 8 T. It is found that CeNiSn behaves like a compound with typical metallic properties instead of exhibiting the expected semiconducting behavior. The main spectral feature is a pronounced zero-bias conductance minimum of about 10 meV width, which appears to be of magnetic nature. These break-junction experiments provide no clear-cut evidence for an energy (pseudo) gap in CeNiSn. |
| format |
Article |
| author |
Naidyuk, Yu.G. Gloos, K. Takabatake, T. |
| author_facet |
Naidyuk, Yu.G. Gloos, K. Takabatake, T. |
| author_sort |
Naidyuk, Yu.G. |
| title |
Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance |
| title_short |
Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance |
| title_full |
Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance |
| title_fullStr |
Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance |
| title_full_unstemmed |
Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance |
| title_sort |
break-junction experiments on the kondo semiconductor cenisn: tunnelling versus direct conductance |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2000 |
| topic_facet |
Электpонные свойства металлов и сплавов |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/129106 |
| citation_txt |
Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance / Yu.G. Naidyuk, K. Gloos, T. Takabatake // Физика низких температур. — 2000. — Т. 26, № 7. — С. 687-693. — Бібліогр.: 14 назв. — англ. |
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Физика низких температур |
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2023-10-18T20:56:54Z |
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2023-10-18T20:56:54Z |
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