On the nature of ionic liquid gating of Nd₂CuO₄ thin films
Recently, ionic liquid gating has been used to modulate the charge carrier properties of metal oxides. The mechanism behind it, however, is still a matter of debate. In this paper, we report experiments on doped and undoped Nd₂CuO₄. We find major resistance drops of the bilayer coupled to observatio...
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| Дата: | 2017 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2017
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| Назва видання: | Физика низких температур |
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| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/129380 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | On the nature of ionic liquid gating of Nd₂CuO₄ thin films / Hasan Atesci, Francesco Coneri, Maarten Leeuwenhoek, Hans Hilgenkamp, Jan M. van Ruitenbeek // Физика низких температур. — 2017. — Т. 43, № 2. — С. 353-359. — Бібліогр.: 50 назв. — англ. |
Репозитарії
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irk-123456789-1293802018-01-20T03:05:30Z On the nature of ionic liquid gating of Nd₂CuO₄ thin films Atesci, Hasan Coneri, Francesco Leeuwenhoek, Maarten Hilgenkamp, Hans Jan M. van Ruitenbeek К 100-летию со дня рождения И.М. Лифшица Recently, ionic liquid gating has been used to modulate the charge carrier properties of metal oxides. The mechanism behind it, however, is still a matter of debate. In this paper, we report experiments on doped and undoped Nd₂CuO₄. We find major resistance drops of the bilayer coupled to observations of the presence of a considerable Faradeic component in the gate current and of the appearance of charge transfer peaks in the cyclic voltammetry data. This leads us to propose a mechanism of gating based on irreversible electrochemical reactions, likely due to trace amounts of contaminations present in the ionic liquid. This work is therefore in line with previous reports confirming the presence of irreversible electrochemistry in ionic liquid gated electron- doped cuprates. 2017 Article On the nature of ionic liquid gating of Nd₂CuO₄ thin films / Hasan Atesci, Francesco Coneri, Maarten Leeuwenhoek, Hans Hilgenkamp, Jan M. van Ruitenbeek // Физика низких температур. — 2017. — Т. 43, № 2. — С. 353-359. — Бібліогр.: 50 назв. — англ. 0132-6414 PACS: 66.10.–x, 68.15.+e, 82.45.–h http://dspace.nbuv.gov.ua/handle/123456789/129380 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
К 100-летию со дня рождения И.М. Лифшица К 100-летию со дня рождения И.М. Лифшица |
| spellingShingle |
К 100-летию со дня рождения И.М. Лифшица К 100-летию со дня рождения И.М. Лифшица Atesci, Hasan Coneri, Francesco Leeuwenhoek, Maarten Hilgenkamp, Hans Jan M. van Ruitenbeek On the nature of ionic liquid gating of Nd₂CuO₄ thin films Физика низких температур |
| description |
Recently, ionic liquid gating has been used to modulate the charge carrier properties of metal oxides. The mechanism behind it, however, is still a matter of debate. In this paper, we report experiments on doped and undoped Nd₂CuO₄. We find major resistance drops of the bilayer coupled to observations of the presence of a considerable Faradeic component in the gate current and of the appearance of charge transfer peaks in the cyclic voltammetry data. This leads us to propose a mechanism of gating based on irreversible electrochemical reactions, likely due to trace amounts of contaminations present in the ionic liquid. This work is therefore in line with previous reports confirming the presence of irreversible electrochemistry in ionic liquid gated electron- doped cuprates. |
| format |
Article |
| author |
Atesci, Hasan Coneri, Francesco Leeuwenhoek, Maarten Hilgenkamp, Hans Jan M. van Ruitenbeek |
| author_facet |
Atesci, Hasan Coneri, Francesco Leeuwenhoek, Maarten Hilgenkamp, Hans Jan M. van Ruitenbeek |
| author_sort |
Atesci, Hasan |
| title |
On the nature of ionic liquid gating of Nd₂CuO₄ thin films |
| title_short |
On the nature of ionic liquid gating of Nd₂CuO₄ thin films |
| title_full |
On the nature of ionic liquid gating of Nd₂CuO₄ thin films |
| title_fullStr |
On the nature of ionic liquid gating of Nd₂CuO₄ thin films |
| title_full_unstemmed |
On the nature of ionic liquid gating of Nd₂CuO₄ thin films |
| title_sort |
on the nature of ionic liquid gating of nd₂cuo₄ thin films |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2017 |
| topic_facet |
К 100-летию со дня рождения И.М. Лифшица |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/129380 |
| citation_txt |
On the nature of ionic liquid gating of Nd₂CuO₄ thin films / Hasan Atesci, Francesco Coneri, Maarten Leeuwenhoek, Hans Hilgenkamp, Jan M. van Ruitenbeek // Физика низких температур. — 2017. — Т. 43, № 2. — С. 353-359. — Бібліогр.: 50 назв. — англ. |
| series |
Физика низких температур |
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