Crystallization mechanism control during epitaxy from solution-melt

Main problems appearing during heteroepitaxy from solution-melts and requirements to time-temperature profiles at the crystallization front have been considered. The substrate cooling possibility by gas feeding to the reactor from outside to provide the crystallization conditions that consecutively...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2006
Автори: Baganov, Ye.O., Shutov, S.V.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2006
Назва видання:Functional Materials
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/134185
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Crystallization mechanism control during epitaxy from solution-melt / Ye.O. Baganov, S.V. Shutov // Functional Materials. — 2006. — Т. 13, № 3. — С. 438-442. — Бібліогр.: 7 назв. — англ.

Репозиторії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:Main problems appearing during heteroepitaxy from solution-melts and requirements to time-temperature profiles at the crystallization front have been considered. The substrate cooling possibility by gas feeding to the reactor from outside to provide the crystallization conditions that consecutively combine properties both pulse and quasi-equilibrium conditions growth methods dare shown. A model of heat and mass transfer for a priori determination of the cooling gas consumption has been examined experimentally.