Crystallization mechanism control during epitaxy from solution-melt

Main problems appearing during heteroepitaxy from solution-melts and requirements to time-temperature profiles at the crystallization front have been considered. The substrate cooling possibility by gas feeding to the reactor from outside to provide the crystallization conditions that consecutively...

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Бібліографічні деталі
Видавець:НТК «Інститут монокристалів» НАН України
Дата:2006
Автори: Baganov, Ye.O., Shutov, S.V.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2006
Назва видання:Functional Materials
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/134185
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Цитувати:Crystallization mechanism control during epitaxy from solution-melt / Ye.O. Baganov, S.V. Shutov // Functional Materials. — 2006. — Т. 13, № 3. — С. 438-442. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-134185
record_format dspace
spelling irk-123456789-1341852018-06-14T03:03:54Z Crystallization mechanism control during epitaxy from solution-melt Baganov, Ye.O. Shutov, S.V. Main problems appearing during heteroepitaxy from solution-melts and requirements to time-temperature profiles at the crystallization front have been considered. The substrate cooling possibility by gas feeding to the reactor from outside to provide the crystallization conditions that consecutively combine properties both pulse and quasi-equilibrium conditions growth methods dare shown. A model of heat and mass transfer for a priori determination of the cooling gas consumption has been examined experimentally. 2006 Article Crystallization mechanism control during epitaxy from solution-melt / Ye.O. Baganov, S.V. Shutov // Functional Materials. — 2006. — Т. 13, № 3. — С. 438-442. — Бібліогр.: 7 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/134185 en Functional Materials НТК «Інститут монокристалів» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Main problems appearing during heteroepitaxy from solution-melts and requirements to time-temperature profiles at the crystallization front have been considered. The substrate cooling possibility by gas feeding to the reactor from outside to provide the crystallization conditions that consecutively combine properties both pulse and quasi-equilibrium conditions growth methods dare shown. A model of heat and mass transfer for a priori determination of the cooling gas consumption has been examined experimentally.
format Article
author Baganov, Ye.O.
Shutov, S.V.
spellingShingle Baganov, Ye.O.
Shutov, S.V.
Crystallization mechanism control during epitaxy from solution-melt
Functional Materials
author_facet Baganov, Ye.O.
Shutov, S.V.
author_sort Baganov, Ye.O.
title Crystallization mechanism control during epitaxy from solution-melt
title_short Crystallization mechanism control during epitaxy from solution-melt
title_full Crystallization mechanism control during epitaxy from solution-melt
title_fullStr Crystallization mechanism control during epitaxy from solution-melt
title_full_unstemmed Crystallization mechanism control during epitaxy from solution-melt
title_sort crystallization mechanism control during epitaxy from solution-melt
publisher НТК «Інститут монокристалів» НАН України
publishDate 2006
url http://dspace.nbuv.gov.ua/handle/123456789/134185
citation_txt Crystallization mechanism control during epitaxy from solution-melt / Ye.O. Baganov, S.V. Shutov // Functional Materials. — 2006. — Т. 13, № 3. — С. 438-442. — Бібліогр.: 7 назв. — англ.
series Functional Materials
work_keys_str_mv AT baganovyeo crystallizationmechanismcontrolduringepitaxyfromsolutionmelt
AT shutovsv crystallizationmechanismcontrolduringepitaxyfromsolutionmelt
first_indexed 2023-10-18T21:07:35Z
last_indexed 2023-10-18T21:07:35Z
_version_ 1796151989929771008