Optimization of thermal conditions in growing of GSO:Ce crystals by Czochralski technique

• Дата: 2005
• Автори: Krivoshein, V.I., Martynov, V.P., Nagornaya, L.L., Ryzhikov, V.D., Bondar`, V.G.
• Формат: Стаття
• Мова: English
• Опубліковано: Institute of Scintillations Materials, STC "institute for Single Crystals" National Academy of Sciences of Ukraine, 60 Lenin Ave., 61001, Kharkiv Ukraine 2005
• Назва видання: Functional Materials
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/134793
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Optimization of thermal conditions in growing of GSO:Ce crystals by Czochralski technique / V.G. Bondar`, V.I. V.P. Krivoshein, V.D. Ryzhikov, V.G. Bondar`, // Functional Materials. — 2005. — Т. 12, № 2. — С. 196-200. — Бібліогр.: 13 назв. — англ.

Crystallization conditions of gadolinium silicate Gd₂SiO₅:Ce have been studied depending on the crystallographic direction of the crystal growing in various thermal conditions. For the developed crystallization assembly, it is just the crucible position relative to the inductor upper turn has been s...