Optimization of thermal conditions in growing of GSO:Ce crystals by Czochralski technique
Crystallization conditions of gadolinium silicate Gd₂SiO₅:Ce have been studied depending on the crystallographic direction of the crystal growing in various thermal conditions. For the developed crystallization assembly, it is just the crucible position relative to the inductor upper turn has been s...
Збережено в:
| Дата: | 2005 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Institute of Scintillations Materials, STC "institute for Single Crystals" National Academy of Sciences of Ukraine, 60 Lenin Ave., 61001, Kharkiv Ukraine
2005
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/134793 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optimization of thermal conditions in growing of GSO:Ce crystals by Czochralski technique / V.G. Bondar`, V.I. V.P. Krivoshein, V.D. Ryzhikov, V.G. Bondar`, // Functional Materials. — 2005. — Т. 12, № 2. — С. 196-200. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Crystallization conditions of gadolinium silicate Gd₂SiO₅:Ce have been studied depending on the crystallographic direction of the crystal growing in various thermal conditions. For the developed crystallization assembly, it is just the crucible position relative to the inductor upper turn has been shown to be the optimum one. Determined have been the growing parameters and regimes providing the obtained of high spectrometric quality of up to 50 mm in diameter and up to 150 mm length. The 40x40 mm² scintillators prepared from those crystals show the energy resolution 10.4 % under y irradiation with ¹³⁷Cs (662 keV). |
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