Optimization of thermal conditions in growing of GSO:Ce crystals by Czochralski technique
Crystallization conditions of gadolinium silicate Gd₂SiO₅:Ce have been studied depending on the crystallographic direction of the crystal growing in various thermal conditions. For the developed crystallization assembly, it is just the crucible position relative to the inductor upper turn has been s...
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| Дата: | 2005 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Institute of Scintillations Materials, STC "institute for Single Crystals" National Academy of Sciences of Ukraine, 60 Lenin Ave., 61001, Kharkiv Ukraine
2005
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/134793 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optimization of thermal conditions in growing of GSO:Ce crystals by Czochralski technique / V.G. Bondar`, V.I. V.P. Krivoshein, V.D. Ryzhikov, V.G. Bondar`, // Functional Materials. — 2005. — Т. 12, № 2. — С. 196-200. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1347932018-06-15T03:05:28Z Optimization of thermal conditions in growing of GSO:Ce crystals by Czochralski technique Krivoshein, V.I. Martynov, V.P. Nagornaya, L.L. Ryzhikov, V.D. Bondar`, V.G. Crystallization conditions of gadolinium silicate Gd₂SiO₅:Ce have been studied depending on the crystallographic direction of the crystal growing in various thermal conditions. For the developed crystallization assembly, it is just the crucible position relative to the inductor upper turn has been shown to be the optimum one. Determined have been the growing parameters and regimes providing the obtained of high spectrometric quality of up to 50 mm in diameter and up to 150 mm length. The 40x40 mm² scintillators prepared from those crystals show the energy resolution 10.4 % under y irradiation with ¹³⁷Cs (662 keV). Исследованы условия кристаллизации силиката гадолиния Gd₂SiO₅:Ce в зависимости от кристаллографического направления их выращивания в различных тепловых условиях. Показано, что для разработанного кристаллизационного узла оптимальным является расположение тигля относительно индуктора на 5-7 мм выше верхнего витка индуктора. Определены параметры и режимы роста, позволяющие получать кристаллы диаметром до 50 мм и длинной до 150 мм высокого спектрометрического качества. Сцинтилляторы 40x40 mm² , изготовленные из этих кристаллов, показали энергетическое разрешение 10,4 % при облучении y-излучением ¹³⁷Cs энергией 662 кэВ. 2005 Article Optimization of thermal conditions in growing of GSO:Ce crystals by Czochralski technique / V.G. Bondar`, V.I. V.P. Krivoshein, V.D. Ryzhikov, V.G. Bondar`, // Functional Materials. — 2005. — Т. 12, № 2. — С. 196-200. — Бібліогр.: 13 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/134793 en Functional Materials Institute of Scintillations Materials, STC "institute for Single Crystals" National Academy of Sciences of Ukraine, 60 Lenin Ave., 61001, Kharkiv Ukraine |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Crystallization conditions of gadolinium silicate Gd₂SiO₅:Ce have been studied depending on the crystallographic direction of the crystal growing in various thermal conditions. For the developed crystallization assembly, it is just the crucible position relative to the inductor upper turn has been shown to be the optimum one. Determined have been the growing parameters and regimes providing the obtained of high spectrometric quality of up to 50 mm in diameter and up to 150 mm length. The 40x40 mm² scintillators prepared from those crystals show the energy resolution 10.4 % under y irradiation with ¹³⁷Cs (662 keV). |
| format |
Article |
| author |
Krivoshein, V.I. Martynov, V.P. Nagornaya, L.L. Ryzhikov, V.D. Bondar`, V.G. |
| spellingShingle |
Krivoshein, V.I. Martynov, V.P. Nagornaya, L.L. Ryzhikov, V.D. Bondar`, V.G. Optimization of thermal conditions in growing of GSO:Ce crystals by Czochralski technique Functional Materials |
| author_facet |
Krivoshein, V.I. Martynov, V.P. Nagornaya, L.L. Ryzhikov, V.D. Bondar`, V.G. |
| author_sort |
Krivoshein, V.I. |
| title |
Optimization of thermal conditions in growing of GSO:Ce crystals by Czochralski technique |
| title_short |
Optimization of thermal conditions in growing of GSO:Ce crystals by Czochralski technique |
| title_full |
Optimization of thermal conditions in growing of GSO:Ce crystals by Czochralski technique |
| title_fullStr |
Optimization of thermal conditions in growing of GSO:Ce crystals by Czochralski technique |
| title_full_unstemmed |
Optimization of thermal conditions in growing of GSO:Ce crystals by Czochralski technique |
| title_sort |
optimization of thermal conditions in growing of gso:ce crystals by czochralski technique |
| publisher |
Institute of Scintillations Materials, STC "institute for Single Crystals" National Academy of Sciences of Ukraine, 60 Lenin Ave., 61001, Kharkiv Ukraine |
| publishDate |
2005 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/134793 |
| citation_txt |
Optimization of thermal conditions in growing of GSO:Ce crystals by Czochralski technique / V.G. Bondar`, V.I. V.P. Krivoshein, V.D. Ryzhikov, V.G. Bondar`, // Functional Materials. — 2005. — Т. 12, № 2. — С. 196-200. — Бібліогр.: 13 назв. — англ. |
| series |
Functional Materials |
| work_keys_str_mv |
AT krivosheinvi optimizationofthermalconditionsingrowingofgsocecrystalsbyczochralskitechnique AT martynovvp optimizationofthermalconditionsingrowingofgsocecrystalsbyczochralskitechnique AT nagornayall optimizationofthermalconditionsingrowingofgsocecrystalsbyczochralskitechnique AT ryzhikovvd optimizationofthermalconditionsingrowingofgsocecrystalsbyczochralskitechnique AT bondarvg optimizationofthermalconditionsingrowingofgsocecrystalsbyczochralskitechnique |
| first_indexed |
2023-10-18T21:08:33Z |
| last_indexed |
2023-10-18T21:08:33Z |
| _version_ |
1796152034075869184 |