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The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals

Behavior of internal friction δ and electric resistance in silicon single crystals with low dislocation density (10-100 cm⁻²) has been studied during of bombardment with α-particles. Effect of strengthening has been found as well as change of direct hysteresis into reverse one in amplitude dependenc...

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Bibliographic Details
Main Authors: Pelikhaty, N.M., Rokhmanov, N.Ya., Onischnko, V.V.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2006
Series:Functional Materials
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/135078
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