The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals
Behavior of internal friction δ and electric resistance in silicon single crystals with low dislocation density (10-100 cm⁻²) has been studied during of bombardment with α-particles. Effect of strengthening has been found as well as change of direct hysteresis into reverse one in amplitude dependenc...
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| Видавець: | НТК «Інститут монокристалів» НАН України |
|---|---|
| Дата: | 2006 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2006
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/135078 |
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| Цитувати: | The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals / N.M. Pelikhaty, N.Ya. Rokhmanov, V.V. Onischnko // Functional Materials. — 2006. — Т. 13, № 4. — С. 613-617. — Бібліогр.: 9 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-135078 |
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irk-123456789-1350782018-06-15T03:06:55Z The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals Pelikhaty, N.M. Rokhmanov, N.Ya. Onischnko, V.V. Behavior of internal friction δ and electric resistance in silicon single crystals with low dislocation density (10-100 cm⁻²) has been studied during of bombardment with α-particles. Effect of strengthening has been found as well as change of direct hysteresis into reverse one in amplitude dependence of internal friction at increasing α-irradiation dose rate. The fact is explained by blocking of charged dislocations by radiation-induced vacancies and areas of charge separetion formed due to secondary infrared irration. 2006 Article The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals / N.M. Pelikhaty, N.Ya. Rokhmanov, V.V. Onischnko // Functional Materials. — 2006. — Т. 13, № 4. — С. 613-617. — Бібліогр.: 9 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/135078 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Behavior of internal friction δ and electric resistance in silicon single crystals with low dislocation density (10-100 cm⁻²) has been studied during of bombardment with α-particles. Effect of strengthening has been found as well as change of direct hysteresis into reverse one in amplitude dependence of internal friction at increasing α-irradiation dose rate. The fact is explained by blocking of charged dislocations by radiation-induced vacancies and areas of charge separetion formed due to secondary infrared irration. |
| format |
Article |
| author |
Pelikhaty, N.M. Rokhmanov, N.Ya. Onischnko, V.V. |
| spellingShingle |
Pelikhaty, N.M. Rokhmanov, N.Ya. Onischnko, V.V. The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals Functional Materials |
| author_facet |
Pelikhaty, N.M. Rokhmanov, N.Ya. Onischnko, V.V. |
| author_sort |
Pelikhaty, N.M. |
| title |
The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals |
| title_short |
The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals |
| title_full |
The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals |
| title_fullStr |
The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals |
| title_full_unstemmed |
The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals |
| title_sort |
influence of high energy irradiation on electrical and dissipative properties of silicon single crystals |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/135078 |
| citation_txt |
The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals / N.M. Pelikhaty, N.Ya. Rokhmanov, V.V. Onischnko // Functional Materials. — 2006. — Т. 13, № 4. — С. 613-617. — Бібліогр.: 9 назв. — англ. |
| series |
Functional Materials |
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| first_indexed |
2023-10-18T21:09:27Z |
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2023-10-18T21:09:27Z |
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