Effect of low-energy ion bombardment during the sputtering on the crystal structure of FePt films
The crystal structure and texture of FePt films have been studied. The film were grown on Si and Al₂O₃ substrates by RF magnetron sputtering using ion bombardment during the growth. The ion bombardment was done by applying an RF bias to the substrate. At room temperature of substrate, the effect of...
Збережено в:
| Дата: | 2008 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2008
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/135266 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of low-energy ion bombardment during the sputtering on the crystal structure of FePt films // V.V. Naumov, E.I. Il'yashenko // Functional Materials. — 2008. — Т. 15, № 3. — С. 356-363. — Бібліогр.: 4 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The crystal structure and texture of FePt films have been studied. The film were grown on Si and Al₂O₃ substrates by RF magnetron sputtering using ion bombardment during the growth. The ion bombardment was done by applying an RF bias to the substrate. At room temperature of substrate, the effect of external magnetic field directed along the substrate surface during the film growth was studied. The films with axial (111) texture have been obtained at any substrate type. The substrate bias and magnetic field enhance the film crystallinity degree without change of texture type. The films with in-plane magnetization have been obtained at Al₂O₃ substrate temperature above 400°C and at substrate bias of 3 to 5 V but without use of magnetic field. |
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