Growth of crystals with bent crystalline lattice in amorphous semiconductor films

• Дата: 2008
• Автори: Bagmut, A.G., Grigorov, S.N., Kosevich, V.M., Lyubchenko, E.A., Nikolaychuk, G.P., Samoylenko, D.N.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2008
• Назва видання: Functional Materials
• Теми: Characterization and properties
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/135275
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Growth of crystals with bent crystalline lattice in amorphous semiconductor films // A.G. Bagmut, S.N. Grigorov, V.M. Kosevich, E.A. Lyubchenko, G.P. Nikolaychuk, D.N. Samoylenko // Functional Materials. — 2008. — Т. 15, № 3. — С. 332-337. — Бібліогр.: 11 назв. — англ.

Crystallization of amorphous films of gallium, indium and antimony chalkogenides (Sb₂S₃, ln₂Se₃, Ga₂Te₃ and Sb₂Te₃) has been investigated to elucidate the crystallization character and to determine conditions favoring the growth of crystals with bent crystalline lattice. It has been found that the l...