Layer interaction in thin film CIS based photovoltaic device

• Дата: 2005
• Автори: Klochko, N.P., Volkova, N.D., Dobrotvorskaya, M.V., Mateychenko, P.V., Kopach, V.R., Shkaleto, V.I., Karasyov, S.N.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2005
• Назва видання: Functional Materials
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/135338
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Layer interaction in thin film CIS based photovoltaic device / N.P. Klochko, N.D. Volkova, M.V. Dobrotvorskaya, P.V. Mateychenko, V.R. Kopach, V.I. Shkaleto, S.N. Karasyov // Functional Materials. — 2005. — Т. 12, № 2. — С. 228-233. — Бібліогр.: 12 назв. — англ.

The function of thin film photovoltaic device on the base of copper indium diselenide (CIS) depends immediately on the character of interactions in the layers being in contact therein: base CIS layer, buffer ZnSe layer, transparent conductive film of indium-tin oxide (ITO). Such interaction may occur during ZnSe electrodeposition from solution on the ITO or CIS surfaces as well as during vacuum annealing used in the technological process to modify the CIS crystal structure. The investigations using scanning electron microscopy, energy dispersing X-ray spectroscopy, electron-probe microanalysis, X-ray diffractometry, and X-ray photoelectron spectroscopy have shown that during vacuum annealing of the glass/Mo/CIS/ZnSe compositions, the buffer layer is purified of contamination, but the same annealing of the glass/Mo/ITO/ZnSe compositions enriches the buffer layer in indium and transforms it into ZnlnᵪSeᵧ.