Photocurrent generation in single electron tunneling transistors
A single-electron tunneling transistor (SET) with a non-equilibrium mode population in one of the leads is analyzed theoretically. We model transport through a dot coupled to a channel, both formed by gates from the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. The non-equilibrium m...
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| Дата: | 1999 |
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| Автор: | |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
1999
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/136222 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photocurrent generation in single electron tunneling transistors / O. Tageman // Физика низких температур. — 1999. — Т. 25, № 3. — С. 290-297. — Бібліогр.: 26 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-136222 |
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dspace |
| spelling |
irk-123456789-1362222018-06-17T03:08:54Z Photocurrent generation in single electron tunneling transistors Tageman, O. Низкоразмерные и неупорядоченные системы A single-electron tunneling transistor (SET) with a non-equilibrium mode population in one of the leads is analyzed theoretically. We model transport through a dot coupled to a channel, both formed by gates from the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. The non-equilibrium mode population, which is induced by coherent THz-pumping in the channel, produces empty states below the Fermi level for electrons to tunnel into. A photocurrent arises, which is periodically saw-tooth peaked with respect to the voltage on a central gate. For intense THz-fields the peaks display plateaus that reflect the energy dependence of the mode population. We also predict a high-gain Vin/Vout transfer-characteristic, similar to that of a current biased SET. 1999 Photocurrent generation in single electron tunneling transistors / O. Tageman // Физика низких температур. — 1999. — Т. 25, № 3. — С. 290-297. — Бібліогр.: 26 назв. — англ. 0132-6414 http://dspace.nbuv.gov.ua/handle/123456789/136222 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Низкоразмерные и неупорядоченные системы Низкоразмерные и неупорядоченные системы |
| spellingShingle |
Низкоразмерные и неупорядоченные системы Низкоразмерные и неупорядоченные системы Tageman, O. Photocurrent generation in single electron tunneling transistors Физика низких температур |
| description |
A single-electron tunneling transistor (SET) with a non-equilibrium mode population in one of the leads is analyzed theoretically. We model transport through a dot coupled to a channel, both formed by gates from the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. The non-equilibrium mode population, which is induced by coherent THz-pumping in the channel, produces empty states below the Fermi level for electrons to tunnel into. A photocurrent arises, which is periodically saw-tooth peaked with respect to the voltage on a central gate. For intense THz-fields the peaks display plateaus that reflect the energy dependence of the mode population. We also predict a high-gain Vin/Vout transfer-characteristic, similar to that of a current biased SET. |
| author |
Tageman, O. |
| author_facet |
Tageman, O. |
| author_sort |
Tageman, O. |
| title |
Photocurrent generation in single electron tunneling transistors |
| title_short |
Photocurrent generation in single electron tunneling transistors |
| title_full |
Photocurrent generation in single electron tunneling transistors |
| title_fullStr |
Photocurrent generation in single electron tunneling transistors |
| title_full_unstemmed |
Photocurrent generation in single electron tunneling transistors |
| title_sort |
photocurrent generation in single electron tunneling transistors |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
1999 |
| topic_facet |
Низкоразмерные и неупорядоченные системы |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/136222 |
| citation_txt |
Photocurrent generation in single electron tunneling transistors / O. Tageman // Физика низких температур. — 1999. — Т. 25, № 3. — С. 290-297. — Бібліогр.: 26 назв. — англ. |
| series |
Физика низких температур |
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AT tagemano photocurrentgenerationinsingleelectrontunnelingtransistors |
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2023-10-18T21:12:21Z |
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2023-10-18T21:12:21Z |
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1796152194668429312 |