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The aggregation of point defetc in dislocation-free silicon single crystals
The formation kinetics for grown-in microdefects nucleation centers in dislocation-free silicon single crystals has been considered. It has been demonstrated that the diffusion-controlled aggregation of point defects defines the process of grown-in microdefects formation. Decomposition of oversatura...
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| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2007
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| Series: | Functional Materials |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/136429 |
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