The aggregation of point defetc in dislocation-free silicon single crystals
The formation kinetics for grown-in microdefects nucleation centers in dislocation-free silicon single crystals has been considered. It has been demonstrated that the diffusion-controlled aggregation of point defects defines the process of grown-in microdefects formation. Decomposition of oversatura...
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| Видавець: | НТК «Інститут монокристалів» НАН України |
|---|---|
| Дата: | 2007 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2007
|
| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/136429 |
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| Цитувати: | The aggregation of point defetc in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, A.A. Voronin, A.V. Sirota // Functional Materials. — 2007. — Т. 14, № 1. — С. 48-52. — Бібліогр.: 14 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-136429 |
|---|---|
| record_format |
dspace |
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irk-123456789-1364292018-06-17T03:08:13Z The aggregation of point defetc in dislocation-free silicon single crystals Talanin, V.I. Talanin, I.E. Voronin, A.A. Sirota, A.V. The formation kinetics for grown-in microdefects nucleation centers in dislocation-free silicon single crystals has been considered. It has been demonstrated that the diffusion-controlled aggregation of point defects defines the process of grown-in microdefects formation. Decomposition of oversaturated solid-state solution follows two mechanisms, namely vacancy-type and interstitial-type. Decomposition of oversaturated solid impurity solutions occurs at temperatures near the crystallization front, while decomposition of oversaturated solid solutions of intrinsic point defects is induced by crystal cooling (at T < 1200°C). The good consistency between theoretical and experimental results proves the validity of the proposed model for point defects aggregation. 2007 Article The aggregation of point defetc in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, A.A. Voronin, A.V. Sirota // Functional Materials. — 2007. — Т. 14, № 1. — С. 48-52. — Бібліогр.: 14 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/136429 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The formation kinetics for grown-in microdefects nucleation centers in dislocation-free silicon single crystals has been considered. It has been demonstrated that the diffusion-controlled aggregation of point defects defines the process of grown-in microdefects formation. Decomposition of oversaturated solid-state solution follows two mechanisms, namely vacancy-type and interstitial-type. Decomposition of oversaturated solid impurity solutions occurs at temperatures near the crystallization front, while decomposition of oversaturated solid solutions of intrinsic point defects is induced by crystal cooling (at T < 1200°C). The good consistency between theoretical and experimental results proves the validity of the proposed model for point defects aggregation. |
| format |
Article |
| author |
Talanin, V.I. Talanin, I.E. Voronin, A.A. Sirota, A.V. |
| spellingShingle |
Talanin, V.I. Talanin, I.E. Voronin, A.A. Sirota, A.V. The aggregation of point defetc in dislocation-free silicon single crystals Functional Materials |
| author_facet |
Talanin, V.I. Talanin, I.E. Voronin, A.A. Sirota, A.V. |
| author_sort |
Talanin, V.I. |
| title |
The aggregation of point defetc in dislocation-free silicon single crystals |
| title_short |
The aggregation of point defetc in dislocation-free silicon single crystals |
| title_full |
The aggregation of point defetc in dislocation-free silicon single crystals |
| title_fullStr |
The aggregation of point defetc in dislocation-free silicon single crystals |
| title_full_unstemmed |
The aggregation of point defetc in dislocation-free silicon single crystals |
| title_sort |
aggregation of point defetc in dislocation-free silicon single crystals |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2007 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/136429 |
| citation_txt |
The aggregation of point defetc in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, A.A. Voronin, A.V. Sirota // Functional Materials. — 2007. — Т. 14, № 1. — С. 48-52. — Бібліогр.: 14 назв. — англ. |
| series |
Functional Materials |
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