Effect of technology parameters on the quality of nZnSe(X)/Ni Schottky diodes
Effect of technology parameters on the quality of nZnSe(X)/Nl Schottky's surface barrier structure used as components of UV photosensitive detectors are studied. Both the spectrum and the total sensitivity of photodiodes depend substantially on the nickel film thickness. Estimation of the film...
Збережено в:
| Дата: | 2008 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2008
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/136547 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of technology parameters on the quality of nZnSe(X)/Ni Schottky diodes // K.A. Katrunov, L.P. Galchinetskii, B.V. Grinyov, N.G. Starzhinskiy, G.N. Bendeberya, E.A. Bondarenko // Functional Materials. — 2008. — Т. 15, № 4. — С. 585-588. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Effect of technology parameters on the quality of nZnSe(X)/Nl Schottky's surface barrier structure used as components of UV photosensitive detectors are studied. Both the spectrum and the total sensitivity of photodiodes depend substantially on the nickel film thickness. Estimation of the film thickness showed that optimal nickel layer thickness is ~ 20 nm. The shape of spectral sensitivity curve does not depend on activator impurity in the ZnSe crystal which the diode is formed from. |
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