Optical properties of Ge-As-S thin films
Thin Ge-As-S films have been prepared by thermal vacuum evaporation. Optical parameters and thickness values of the films have been calculated basing on transmission spectra. The dispersion dependences of the refractive index have been shown to be described well by the single oscillator model. The o...
Збережено в:
| Дата: | 2009 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2009
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/136625 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optical properties of Ge-As-S thin films // I.D. Tolmachov, A.V. Stronski // Functional Materials. — 2009. — Т. 16, № 1. — С. 32-35. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Thin Ge-As-S films have been prepared by thermal vacuum evaporation. Optical parameters and thickness values of the films have been calculated basing on transmission spectra. The dispersion dependences of the refractive index have been shown to be described well by the single oscillator model. The optical band gap width has been determined using the Tauc dependence. The non-linear optical properties of the films have been estimated basing on the data obtained. |
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