Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment

This work reviews the hitherto published and new results concerning the compositional, structural and magnetic properties of single crystal Si irradiated/implanted with non-magnetic atoms and, especially, with medium dosage (D≤1*10¹⁶ cm⁻²) of V⁺, Cr⁺ and Mn⁺, and subsequently processed at HT-(HP). T...

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Datum:2008
Hauptverfasser: Misiuk, A., Ch. Lee
Format: Artikel
Sprache:English
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2008
Schriftenreihe:Functional Materials
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Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/137235
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment / A. Misiuk, C. Lee // Functional Materials. — 2008. — Т. 15, № 1. — С. 131-138. — Бібліогр.: 39 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
Beschreibung
Zusammenfassung:This work reviews the hitherto published and new results concerning the compositional, structural and magnetic properties of single crystal Si irradiated/implanted with non-magnetic atoms and, especially, with medium dosage (D≤1*10¹⁶ cm⁻²) of V⁺, Cr⁺ and Mn⁺, and subsequently processed at HT-(HP). The HT-(HP) treatment affects, among others, the solid phase epitaxial re-growth of amorphous a-Si layer created at implantation. Processed Si:V, Si:Cr and Si:Mn indicate magnetic ordering up to above 300 K. This means that the new Si:V, Si:Cr and Si:Mn materials belonging to the family of Diluted Magnetic Semiconductors have been produced.