Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment
This work reviews the hitherto published and new results concerning the compositional, structural and magnetic properties of single crystal Si irradiated/implanted with non-magnetic atoms and, especially, with medium dosage (D≤1*10¹⁶ cm⁻²) of V⁺, Cr⁺ and Mn⁺, and subsequently processed at HT-(HP). T...
Збережено в:
| Дата: | 2008 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2008
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/137235 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment / A. Misiuk, C. Lee // Functional Materials. — 2008. — Т. 15, № 1. — С. 131-138. — Бібліогр.: 39 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | This work reviews the hitherto published and new results concerning the compositional, structural and magnetic properties of single crystal Si irradiated/implanted with non-magnetic atoms and, especially, with medium dosage (D≤1*10¹⁶ cm⁻²) of V⁺, Cr⁺ and Mn⁺, and subsequently processed at HT-(HP). The HT-(HP) treatment affects, among others, the solid phase epitaxial re-growth of amorphous a-Si layer created at implantation. Processed Si:V, Si:Cr and Si:Mn indicate magnetic ordering up to above 300 K. This means that the new Si:V, Si:Cr and Si:Mn materials belonging to the family of Diluted Magnetic Semiconductors have been produced. |
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