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Study of surface influence on the n-Ge(110) electroreflectance spectra and their polarization spectroscopy
The contribution of the real (preliminary chemically etched) (110) surface of n-Ge into electroreflectance effect (energy range 1.9-2.6 eV) basing on polarization anisotropy of electrooptical effect has been separated under assumption that the surface electroreflectance component is isotropic while...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2009
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| Series: | Functional Materials |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/138899 |
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| Summary: | The contribution of the real (preliminary chemically etched) (110) surface of n-Ge into electroreflectance effect (energy range 1.9-2.6 eV) basing on polarization anisotropy of electrooptical effect has been separated under assumption that the surface electroreflectance component is isotropic while the bulk component of electroreflectance is anisotropic with respect to the light polarization vector orientation. The influence of the surface state on the anisotropic electroreflectance spectra, form changes of the subsurface potential barrier and internal mechanical stresses after mechanical polishing have been considered. Electron parameters of the n-Ge(110) subsurface layer are determined. |
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