2025-02-22T16:35:55-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-139311%22&qt=morelikethis&rows=5
2025-02-22T16:35:55-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-139311%22&qt=morelikethis&rows=5
2025-02-22T16:35:55-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T16:35:55-05:00 DEBUG: Deserialized SOLR response
Si as dopant impurity in CdTe
CdTe<Si> single crystals have been investigated by high-temperature Hall effect meas- urements under Cd vapor pressure in 200-900 ℃ temperature range. Basing on the experimental results, the Si solubility in CdTe at 500-600 ℃ has been supposed to be lower than ≈ 3*10¹⁶ at/cm . The Si segregati...
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| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2005
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| Series: | Functional Materials |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/139311 |
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