Exchange coupling peculiarities in ultrathin Fe/Cu/Tb film structures on Si substrates

• Дата: 2004
• Автори: Pogoryelov, Ye.O., Podyalovski, D.I.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2004
• Назва видання: Functional Materials
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/139474
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Exchange coupling peculiarities in ultrathin Fe/Cu/Tb film structures on Si substrates / Ye.O. Pogoryelov, D.I. Podyalovski // Functional Materials. — 2004. — Т. 11, № 3. — С. 560-562. — Бібліогр.: 12 назв. — англ.

Exchange coupling in ultrathin Fe(8 A)/[Cu/Tb (12 A) film structure has been studied. The film samples were prepared on Si substrates by electron-beam evaporation in an ultrahigh vacuum system having a background pressure of =10⁻⁹ Torr. To suppress formation of Fe-silicide on Si/Fe interface, a buffer Cu layer (10 A) was preliminary deposited onto Si substrate. To characterize the film, ferromagnetic resonance (FMR) and a knowhow based on the Hall-like effect in zero external magnetic field were used. It has been shown that when Cu spacer thickness is increased, a periodical change of Fe film resonance field occurs. Application of FMR allowed to conclude directly the sign of exchange coupling between Fe and Tb layers or, in other words, the mutual orientation of their magnetizations. These results were also confirmed by new technique based on Hall-like effect. The period of oscillations obtained has been measured to be of about 2.65 Cu monolayers and is in good agreement with the value of 2.6 monolayers for the Cu(001) Fermi surface.