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Radiation-induced changes in dielectric and photoelectric properties of AᴵᴵBⱽᴵ crystals

To determine the kinetics of pre-threshold defect formation, studies have been carried out of dielectric permittivity of isovalently doped zinc selenide and Cd₁₋ₓZnₓTe crystals (x = 0.16). X-ray irradiation of the samples was carried out (W-anode, 100-150 kV), with its dose D varied within the limit...

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Bibliographic Details
Main Authors: Ryzhikov, V., Starzhinskiy, N., Chugai, O., Seminozhenko, V., Migal, V., Komar, V., Klimenko, I., Katrunov, K., Abashin, S., Oleinik, S., Sulima, S., Zenya, I.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2004
Series:Functional Materials
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/139476
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