Radiation-induced changes in dielectric and photoelectric properties of AᴵᴵBⱽᴵ crystals

• Main Authors: Ryzhikov, V., Starzhinskiy, N., Chugai, O., Seminozhenko, V., Migal, V., Komar, V., Klimenko, I., Katrunov, K., Abashin, S., Oleinik, S., Sulima, S., Zenya, I.
• Format: Article
• Language: English
• Published: НТК «Інститут монокристалів» НАН України 2004
• Series: Functional Materials
• Online Access: http://dspace.nbuv.gov.ua/handle/123456789/139476

To determine the kinetics of pre-threshold defect formation, studies have been carried out of dielectric permittivity of isovalently doped zinc selenide and Cd₁₋ₓZnₓTe crystals (x = 0.16). X-ray irradiation of the samples was carried out (W-anode, 100-150 kV), with its dose D varied within the limits of up to 900 R. Dielectric parameters є' and є'' were measured by the capacitance technique in the frequency range 1...50 kHz. The photoactive states were studied by the method of scanning photodielectric spectroscopy. Non-trivial changes were noted in parameters є' and є'' upon increasing radiation dose. The values and sign of these changes depend upon the dose, as well as on frequency of the AC electric field. It has been shown that, starting from small values of D, transformation occurs of the system of intrinsic structure defects: concentration of initial defects is changed, new defects are formed, as well as their associates. Substantial difference has been noted in behavior of the said parameters for ZnSe and Cd₁₋ₓZnₓTe crystals.