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Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals

Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals

Electric capacitance C and dielectric losses tgδ have been determined for metal-semiconductor-metal structures based on isovalently doped ZnSe crystals. It has been shown that annealing of the grown crystals in zinc atmosphere causes the increase of C by 2-3 orders of magnitude. This parameter, as w...

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Bibliographic Details
Main Authors: Chugai, O., Ryzhikov, V., Starzhinskiy, N., Oleynik, S., Katrunov, K., Zenya, I.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2004
Series:Functional Materials
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/139500
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http://dspace.nbuv.gov.ua/handle/123456789/139500

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