2025-02-22T23:50:24-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-139500%22&qt=morelikethis&rows=5
2025-02-22T23:50:24-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-139500%22&qt=morelikethis&rows=5
2025-02-22T23:50:24-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T23:50:24-05:00 DEBUG: Deserialized SOLR response
Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals

Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals

Electric capacitance C and dielectric losses tgδ have been determined for metal-semiconductor-metal structures based on isovalently doped ZnSe crystals. It has been shown that annealing of the grown crystals in zinc atmosphere causes the increase of C by 2-3 orders of magnitude. This parameter, as w...

Full description

Saved in:
Bibliographic Details
Main Authors: Chugai, O., Ryzhikov, V., Starzhinskiy, N., Oleynik, S., Katrunov, K., Zenya, I.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2004
Series:Functional Materials
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/139500
Tags: Add Tag
No Tags, Be the first to tag this record!
id irk-123456789-139500
record_format dspace
spelling irk-123456789-1395002018-06-21T03:06:37Z Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals Chugai, O. Ryzhikov, V. Starzhinskiy, N. Oleynik, S. Katrunov, K. Zenya, I. Electric capacitance C and dielectric losses tgδ have been determined for metal-semiconductor-metal structures based on isovalently doped ZnSe crystals. It has been shown that annealing of the grown crystals in zinc atmosphere causes the increase of C by 2-3 orders of magnitude. This parameter, as well as tgδ becomes dependent upon the bias voltage U, with regions of negative and of positive slope observed on the C(U) plots. It has been shown that dependences C(U) and tgδ(U) are determined by changes with voltage in the two oppositely switched Schottky barriers. Исследованы электроемкость C и тангенс угла диэлектрических потерь tgδ структур металл-полупроводник-металл на основе изовалентно легированных кристаллов ZnSe. Установлено, что отжиг кристаллов в атмосфере цинка обусловливает увеличение C на 2-3 порядка. Параметры C и tgδ становятся зависящими от смещающего напряжения U, причем в зависимости C(U) наблюдаются участки как с отрицательным, так и с положительным наклоном. Показано, что зависимости C(U) и tgδ(U) определяются изменением с напряжением двух, включенных навстречу друг другу, барьеров Шоттки. Досліджєно єлєктроємність C и тангенс кута дієлєктричних втрат tgδ структур метал-напівпровідник-метал на основі ізовалентно легованих кристалів ZnSe. Встановлено, що відпал кристалів у середовищі цинку обумовлює збільшення C на 2-3 порядки. Параметри C i tgδ стають залежними від зміщуючої напруги U, причому в залежності C(U) спостерігаються області як з негативним, так і з позитивним нахилом. Показано, що C(U) i tgδ(U) визначаються залежністю від напруги двох бар’єрів Шоттки, що ввімкнено назустріч один одному. 2004 Article Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals / O. Chugai, V. Ryzhikov, N. Starzhinskiy, S. Oleynik, K. Katrunov, I. Zenya // Functional Materials. — 2004. — Т. 11, № 4. — С. 684-688. — Бібліогр.: 7 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/139500 en Functional Materials НТК «Інститут монокристалів» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Electric capacitance C and dielectric losses tgδ have been determined for metal-semiconductor-metal structures based on isovalently doped ZnSe crystals. It has been shown that annealing of the grown crystals in zinc atmosphere causes the increase of C by 2-3 orders of magnitude. This parameter, as well as tgδ becomes dependent upon the bias voltage U, with regions of negative and of positive slope observed on the C(U) plots. It has been shown that dependences C(U) and tgδ(U) are determined by changes with voltage in the two oppositely switched Schottky barriers.
format Article
author Chugai, O.
Ryzhikov, V.
Starzhinskiy, N.
Oleynik, S.
Katrunov, K.
Zenya, I.
spellingShingle Chugai, O.
Ryzhikov, V.
Starzhinskiy, N.
Oleynik, S.
Katrunov, K.
Zenya, I.
Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals
Functional Materials
author_facet Chugai, O.
Ryzhikov, V.
Starzhinskiy, N.
Oleynik, S.
Katrunov, K.
Zenya, I.
author_sort Chugai, O.
title Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals
title_short Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals
title_full Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals
title_fullStr Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals
title_full_unstemmed Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals
title_sort electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals
publisher НТК «Інститут монокристалів» НАН України
publishDate 2004
url http://dspace.nbuv.gov.ua/handle/123456789/139500
citation_txt Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals / O. Chugai, V. Ryzhikov, N. Starzhinskiy, S. Oleynik, K. Katrunov, I. Zenya // Functional Materials. — 2004. — Т. 11, № 4. — С. 684-688. — Бібліогр.: 7 назв. — англ.
series Functional Materials
work_keys_str_mv AT chugaio electrophysicalpropertiesofmetalsemiconductormetalstructuresbasedonisovalentlydopedzincselenidecrystals
AT ryzhikovv electrophysicalpropertiesofmetalsemiconductormetalstructuresbasedonisovalentlydopedzincselenidecrystals
AT starzhinskiyn electrophysicalpropertiesofmetalsemiconductormetalstructuresbasedonisovalentlydopedzincselenidecrystals
AT oleyniks electrophysicalpropertiesofmetalsemiconductormetalstructuresbasedonisovalentlydopedzincselenidecrystals
AT katrunovk electrophysicalpropertiesofmetalsemiconductormetalstructuresbasedonisovalentlydopedzincselenidecrystals
AT zenyai electrophysicalpropertiesofmetalsemiconductormetalstructuresbasedonisovalentlydopedzincselenidecrystals
first_indexed 2023-10-18T21:20:29Z
last_indexed 2023-10-18T21:20:29Z
_version_ 1796152561148887040

Similar Items