2025-02-22T23:43:33-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-139500%22&qt=morelikethis&rows=5
2025-02-22T23:43:33-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-139500%22&qt=morelikethis&rows=5
2025-02-22T23:43:33-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T23:43:33-05:00 DEBUG: Deserialized SOLR response
Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals

Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals

Electric capacitance C and dielectric losses tgδ have been determined for metal-semiconductor-metal structures based on isovalently doped ZnSe crystals. It has been shown that annealing of the grown crystals in zinc atmosphere causes the increase of C by 2-3 orders of magnitude. This parameter, as w...

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Bibliographic Details
Main Authors: Chugai, O., Ryzhikov, V., Starzhinskiy, N., Oleynik, S., Katrunov, K., Zenya, I.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2004
Series:Functional Materials
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/139500
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2025-02-22T23:43:33-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-139500%22&qt=morelikethis
2025-02-22T23:43:33-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-139500%22&qt=morelikethis
2025-02-22T23:43:33-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T23:43:33-05:00 DEBUG: Deserialized SOLR response

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