Optically induced change of photoelectric properties of CdMnTe crystals

To study the optically induced transformation of the point defect system under strong ans weak excitation from the intrinsic absorption hv > Eg, photoelectric and electric properties of semiconductor solid solutions С₁-хМnхТе (x = 0.08 + 0.1) have been studied at 78 and 300 K. It has been found...

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Збережено в:
Бібліографічні деталі
Дата:2005
Автори: Savkina, R.K., Sizov, F.F., Smirnov, A.B.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2005
Назва видання:Functional Materials
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/139722
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Optically induced change of photoelectric properties of CdMnTe crystals / R.K. Savkina, F.F. Sizov, A.B. Smirnov // Functional Materials. — 2005. — Т. 12, № 1. — С. 11-16. — Бібліогр.: 28 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Резюме:To study the optically induced transformation of the point defect system under strong ans weak excitation from the intrinsic absorption hv > Eg, photoelectric and electric properties of semiconductor solid solutions С₁-хМnхТе (x = 0.08 + 0.1) have been studied at 78 and 300 K. It has been found that the weak optical excitation (hv - 2 eV) under simultaneous fast chilling down to 78 К results in a dramatic drop of the photocurrent and increase of the crystal dark resistance by more than a decimal order. The crystal photosensitivity is recovered in part by ultrasonic annealing or after a prolonged exposure at room temperature. A possible mechanism of that effect is discussed associated with the photoinduced ionization of manganese ions. The pulse laser irradiation ( λ = 694 nm, τl = 20 ns) at an under-threshold power results in photosensitization of the Cd₁-хMnxTe crystals not only in the irradiation zone but also in the control region.