2025-02-23T06:47:46-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-139745%22&qt=morelikethis&rows=5
2025-02-23T06:47:46-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-139745%22&qt=morelikethis&rows=5
2025-02-23T06:47:46-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T06:47:46-05:00 DEBUG: Deserialized SOLR response
Recombination of non-equilibrium charge carriers injected into Ge through intermediate defective layer

Recombination of non-equilibrium charge carriers injected into Ge through intermediate defective layer

The recombination of non-equilibrium charge carriers injected into n-Ge sample through an intermediate defect layer has been studied in experiment as well as theoretically. The structure defects were formed by cyclic straining with simultaneous ultrasonic irradiation of the sample at 310 K. Distribu...

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Bibliographic Details
Main Authors: Nadtochiy, V., Golodenko, N., Nechvolod, N.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2005
Series:Functional Materials
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/139745
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2025-02-23T06:47:46-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-139745%22&qt=morelikethis
2025-02-23T06:47:46-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-139745%22&qt=morelikethis
2025-02-23T06:47:46-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T06:47:46-05:00 DEBUG: Deserialized SOLR response

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