Periodic structure formation in GaAs near-surface layer by laser beam with diffraction modulated intensity
The method of grids was used to calculate thermoelastic stresses on GaAs surface caused by a non-destructive laser exposure with diffraction spatial intensity modulation from a screen with a rectangular cut-out. The structure of irradiated near-surface layers of samples was studied using optical m...
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| Дата: | 2006 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2006
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/139940 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Periodic structure formation in GaAs near-surface layer by laser beam with diffraction modulated intensity / D. Moskal, V. Nadtochiy, N. Golodenko // Functional Materials. — 2006. — Т. 13, № 1. — С. 100-104. — Бібліогр.: 22 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1399402018-06-22T03:03:21Z Periodic structure formation in GaAs near-surface layer by laser beam with diffraction modulated intensity Moskal, D. Nadtochiy, V. Golodenko, N. The method of grids was used to calculate thermoelastic stresses on GaAs surface caused by a non-destructive laser exposure with diffraction spatial intensity modulation from a screen with a rectangular cut-out. The structure of irradiated near-surface layers of samples was studied using optical method. Periodic insular structures formed due to diffusive redistribution of defects were revealed using the level-by-level chemical etching. Методом сеток проводился расчет термоупругих напряжений на поверхности GaAs, возникающих при неразрушающем лазерном облучении с дифракционной пространственной модуляцией интенсивности от непрозрачного экрана с прямоугольным вырезом. Оптическим методом исследовалась структура облученных приповерхностных слоев кристаллов. Послойным химическим травлением выявлены периодические островковые структуры, образованные в результате диффузионного перераспределения дефектов. Методом сiток виконано розрахунок термопружних напружень на поверхнi GaAs, що виникають при неруйнiвному лазерному опромiненнi з дифракцiйною просторовою модуляцiєю iнтенсивностi вiд непрозорого екрана з прямокутним вирiзом. Оптичним методом дослiджувалася структура опромiнених приповерхневих шарiв кристалiв. Пошаровим хiмiчним травленням виявленi перiодичнi острiвцевi структури, що утворенi внаслiдок дифузiйного перерозподiлу дефектiв. 2006 Article Periodic structure formation in GaAs near-surface layer by laser beam with diffraction modulated intensity / D. Moskal, V. Nadtochiy, N. Golodenko // Functional Materials. — 2006. — Т. 13, № 1. — С. 100-104. — Бібліогр.: 22 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/139940 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The method of grids was used to calculate thermoelastic stresses on GaAs surface
caused by a non-destructive laser exposure with diffraction spatial intensity modulation from a screen with a rectangular cut-out. The structure of irradiated near-surface layers of samples was studied using optical method. Periodic insular structures formed due to diffusive redistribution of defects were revealed using the level-by-level chemical etching. |
| format |
Article |
| author |
Moskal, D. Nadtochiy, V. Golodenko, N. |
| spellingShingle |
Moskal, D. Nadtochiy, V. Golodenko, N. Periodic structure formation in GaAs near-surface layer by laser beam with diffraction modulated intensity Functional Materials |
| author_facet |
Moskal, D. Nadtochiy, V. Golodenko, N. |
| author_sort |
Moskal, D. |
| title |
Periodic structure formation in GaAs near-surface layer by laser beam with diffraction modulated intensity |
| title_short |
Periodic structure formation in GaAs near-surface layer by laser beam with diffraction modulated intensity |
| title_full |
Periodic structure formation in GaAs near-surface layer by laser beam with diffraction modulated intensity |
| title_fullStr |
Periodic structure formation in GaAs near-surface layer by laser beam with diffraction modulated intensity |
| title_full_unstemmed |
Periodic structure formation in GaAs near-surface layer by laser beam with diffraction modulated intensity |
| title_sort |
periodic structure formation in gaas near-surface layer by laser beam with diffraction modulated intensity |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/139940 |
| citation_txt |
Periodic structure formation in GaAs near-surface layer by laser beam with diffraction modulated intensity / D. Moskal, V. Nadtochiy, N. Golodenko // Functional Materials. — 2006. — Т. 13, № 1. — С. 100-104. — Бібліогр.: 22 назв. — англ. |
| series |
Functional Materials |
| work_keys_str_mv |
AT moskald periodicstructureformationingaasnearsurfacelayerbylaserbeamwithdiffractionmodulatedintensity AT nadtochiyv periodicstructureformationingaasnearsurfacelayerbylaserbeamwithdiffractionmodulatedintensity AT golodenkon periodicstructureformationingaasnearsurfacelayerbylaserbeamwithdiffractionmodulatedintensity |
| first_indexed |
2023-10-18T21:21:27Z |
| last_indexed |
2023-10-18T21:21:27Z |
| _version_ |
1796152605453320192 |