Strain relaxation in thin Si₁-ₓ-yGeₓCy layers on Si substrates

• Дата: 2006
• Автори: Valakh, M.Ya., Gamov, D.V., Dzhagan, V.M., Lytvyn, O.S., Melnik, V.P., Romanjuk, B.M., Popov, V.G., Yukhymchuk, V.O.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2006
• Назва видання: Functional Materials
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/140066
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Strain relaxation in thin Si₁-ₓ-yGeₓCy layers on Si substrates / M.Ya. Valakh, D.V. Gamov, V.M. Dzhagan, O.S. Lytvyn, V.P. Melnik, B.M. Romanjuk, V.G. Popov, V.O. Yukhymchuk // Functional Materials. — 2006. — Т. 13, № 1. — С. 79-84. — Бібліогр.: 16 назв. — англ.

The possibility to obtain a heterosystem consisting of the upper partially strained and lower relaxed layers by gradient in situ doping of SiGe layers with carbon is considered. The properties of the as-grown and annealed (600 to 1000℃) samples have been studied by Raman spectroscopy and atomic force microscopy. The strain relaxation degree in the as-grown layers as estimated from the Raman spectra amounts 50 % for Si₀.₇-ʸGe₀.₃Сʸ and 0 % for Si₀.₉-ʸGe₀.₁Сʸ. During the annealing, the strain has been found to be relaxed not homogeneously over the whole structure but in a layer-by-layer way. The segregation of carbon atoms is observed for both types of as-grown Si₁-ₓ-ʸGeₓСʸ layers in the near-substrate regions.