Some characteristics of semiconductor HgCdMnZnTe solid solution crystals

• Дата: 2006
• Автори: Popenko, N., Ivanchenko, I., Brovenko, I., Zhigalov, A., Karelin, S., Gorbatyuk, I., Ostapov, S., Dremlyuzhenko, S., Rarenko, I., Zaplitnyi, R., Fodchuk, I., Deibuk, V.G.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2006
• Назва видання: Functional Materials
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/140079
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Some characteristics of semiconductor HgCdMnZnTe solid solution crystals / N. Popenko, I. Ivanchenko, I. Brovenko, A. Zhigalov, S. Karelin, I. Gorbatyuk, S. Ostapov, S. Dremlyuzhenko, I. Rarenko, R. Zaplitnyi, I. Fodchuk, V.G. Deibuk // Functional Materials. — 2006. — Т. 13, № 2. — С. 249-254. — Бібліогр.: 12 назв. — англ.

А novel semiconductor solid solution HgCdMnZnTe containing up to 5 % of manganese and zinc has been studied. Microhardness of these crystals and galvanomagnetic characteristics have been measured out as well as the X-ray structure analysis thereof. The band-gap width, intrinsic charge carrier concentration and mobility have been determined. It is shown that the novel material has more perfect crystal structure as compared to HgCdTe. The obtained data allow announcing this material as an alternative one for manufacturing effective infrared detectors operating in the 3-5 µm and 8-14 µm spectral ranges.