Structural Aspect of Formation of a Nanosystem of In/In₄Se₃ (100)
Self-assembled indium deposition-induced nanostructures are obtained on the UHV cleaved (100) surface of In₄Se₃ layered semiconductor crystals. The small indium-deposition rates and short deposition times are chosen to study growth orientation and origin of nanostructures observed by scanning tunnel...
Збережено в:
| Дата: | 2018 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут металофізики ім. Г.В. Курдюмова НАН України
2018
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| Назва видання: | Металлофизика и новейшие технологии |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/151868 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Structural Aspect of Formation of a Nanosystem of In/In₄Se₃ (100) / P.V. Galiy, P. Mazur, A. Ciszewski, T.M. Nenchuk, I.R. Yarovets’, O.R. Dveriy // Металлофизика и новейшие технологии. — 2018. — Т. 40, № 10. — С. 1349-1358. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Self-assembled indium deposition-induced nanostructures are obtained on the UHV cleaved (100) surface of In₄Se₃ layered semiconductor crystals. The small indium-deposition rates and short deposition times are chosen to study growth orientation and origin of nanostructures observed by scanning tunnelling microscopy (STM) on the (100) surface of In₄Se₃ after indium deposition. The shape of these nanostructures strictly depends on the overstoichiometric indium concentration level in the melt during the crystal growth varying from 3D islands for low concentration to elongated shapes, i.e., nanowires, in the case of highly-indium-doped crystals. High-resolution STM study determines the self-assembled quasi-periodical nanowires’ growth along c-axis of (100)In₄Se₃ substrate. The spatially resolved scanning tunnelling spectroscopy (STS) study revealed metallic nature of the surface of nanostructures grown on the semiconductor substrate. The growth mechanism of indium-deposited nanostructures is considered to be powered by anisotropic striated lattice structure of In₄Se₃ (100) surface with indium nucleiin concentration depending on the degree of overstoichiometric crystal-growth indium subsequently intercalated into the interlayer gap. |
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