Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field
The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron intraband quantum transitions in double-well spherical quantum dot GaAs/AlxGa1−xAs/GaAs is researched. The problem is solved in the framework of the effective mass approximation and rect...
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| Дата: | 2018 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики конденсованих систем НАН України
2018
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/157039 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field / V.A. Holovatsky, M.Ya. Yakhnevych, O.M. Voitsekhivska // Condensed Matter Physics. — 2018. — Т. 21, № 1. — С. 13703: 1–9. — Бібліогр.: 28 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1570392019-06-20T01:26:47Z Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field Holovatsky, V.A. Yakhnevych, M.Ya. Voitsekhivska, O.M. The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron intraband quantum transitions in double-well spherical quantum dot GaAs/AlxGa1−xAs/GaAs is researched. The problem is solved in the framework of the effective mass approximation and rectangular potential wells and barriers model using the method of wave function expansion over a complete set of electron wave functions in nanostructure without electric field. It is shown that under the effect of electric field, the electron in the ground state tunnels from the inner potential well into the outer one. It also influences on the oscillator strengths of intraband quantum transition. The binding energy of an electron with ion impurity is obtained as a function of electric field intensity at a different location of impurity. The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron intraband quantum transitions in double-well spherical quantum dot GaAs/AlxGa1−xAs/GaAs is researched. The problem is solved in the framework of the effective mass approximation and rectangular potential wells and barriers model using the method of wave function expansion over a complete set of electron wave functions in nanostructure without electric field. It is shown that under the effect of electric field, the electron in the ground state tunnels from the inner potential well into the outer one. It also influences on the oscillator strengths of intraband quantum transition. The binding energy of an electron with ion impurity is obtained as a function of electric field intensity at a different location of impurity. 2018 Article Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field / V.A. Holovatsky, M.Ya. Yakhnevych, O.M. Voitsekhivska // Condensed Matter Physics. — 2018. — Т. 21, № 1. — С. 13703: 1–9. — Бібліогр.: 28 назв. — англ. 1607-324X PACS: 71.38.-k, 63.20.kd, 63.20.dk, 72.10.Di DOI:10.5488/CMP.21.13703 arXiv:1803.11425 http://dspace.nbuv.gov.ua/handle/123456789/157039 en Condensed Matter Physics Інститут фізики конденсованих систем НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron
intraband quantum transitions in double-well spherical quantum dot GaAs/AlxGa1−xAs/GaAs is researched.
The problem is solved in the framework of the effective mass approximation and rectangular potential wells and
barriers model using the method of wave function expansion over a complete set of electron wave functions in
nanostructure without electric field. It is shown that under the effect of electric field, the electron in the ground
state tunnels from the inner potential well into the outer one. It also influences on the oscillator strengths of
intraband quantum transition. The binding energy of an electron with ion impurity is obtained as a function of
electric field intensity at a different location of impurity. |
| format |
Article |
| author |
Holovatsky, V.A. Yakhnevych, M.Ya. Voitsekhivska, O.M. |
| spellingShingle |
Holovatsky, V.A. Yakhnevych, M.Ya. Voitsekhivska, O.M. Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field Condensed Matter Physics |
| author_facet |
Holovatsky, V.A. Yakhnevych, M.Ya. Voitsekhivska, O.M. |
| author_sort |
Holovatsky, V.A. |
| title |
Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field |
| title_short |
Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field |
| title_full |
Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field |
| title_fullStr |
Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field |
| title_full_unstemmed |
Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field |
| title_sort |
optical properties of gaas/alxga1-xas/gaas quantum dot with off-central impurity driven by electric field |
| publisher |
Інститут фізики конденсованих систем НАН України |
| publishDate |
2018 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/157039 |
| citation_txt |
Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field / V.A. Holovatsky, M.Ya. Yakhnevych, O.M. Voitsekhivska // Condensed Matter Physics. — 2018. — Т. 21, № 1. — С. 13703: 1–9. — Бібліогр.: 28 назв. — англ. |
| series |
Condensed Matter Physics |
| work_keys_str_mv |
AT holovatskyva opticalpropertiesofgaasalxga1xasgaasquantumdotwithoffcentralimpuritydrivenbyelectricfield AT yakhnevychmya opticalpropertiesofgaasalxga1xasgaasquantumdotwithoffcentralimpuritydrivenbyelectricfield AT voitsekhivskaom opticalpropertiesofgaasalxga1xasgaasquantumdotwithoffcentralimpuritydrivenbyelectricfield |
| first_indexed |
2023-05-20T17:51:24Z |
| last_indexed |
2023-05-20T17:51:24Z |
| _version_ |
1796154250691084288 |