The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation
In the paper, the effect of the electric field on the conditions of formation and on the period of the surface superlattice of adatoms in n-GaAs semiconductor is investigated. It is established that in GaAs semiconductor, an increase in the electric field strength, depending on the direction, leads...
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| Дата: | 2019 |
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| Формат: | Стаття |
| Мова: | English |
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Інститут фізики конденсованих систем НАН України
2019
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/157479 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation / R.M. Peleshchak, O.V. Kuzyk, O.O. Dan'kiv, S.K. Guba // Condensed Matter Physics. — 2019. — Т. 22, № 1. — С. 13801: 1–15. — Бібліогр.: 26 назв. — англ. |
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irk-123456789-1574792019-06-21T01:29:53Z The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation Peleshchak, R.M. Kuzyk, O.V. Dan'kiv, O.O. Guba, S.K. In the paper, the effect of the electric field on the conditions of formation and on the period of the surface superlattice of adatoms in n-GaAs semiconductor is investigated. It is established that in GaAs semiconductor, an increase in the electric field strength, depending on the direction, leads to an increase or decrease of the critical temperature (the critical concentration of adatoms), at which the formation of self-organized nanostructure is possible. It is shown that in strongly alloyed n-GaAs semiconductor, an increase of the electric field strength leads to a monotonous change (decrease or increase depending У роботi дослiджено вплив електричного поля на умови формування та перiод поверхневої надгратки адсорбованих атомiв у напiвпровiднику n-GaAs. Встановлено, що у напiвпровiднику GaAs збiльшення напруженостi електричного поля залежно вiд напрямку призводить до збiльшення або зменшення критичної температури (критичної концентрацiї адатомiв), при якiй можливе формування самоорганiзованої наноструктури. Показано, що у сильнолегованому напiвпровiднику n-GaAs збiльшення напруженостi електричного поля призводить до монотонної змiни (зменшення чи збiльшення залежно вiд напрямку електричного поля) перiоду самоорганiзованих поверхневих наноструктур адатомiв. 2019 Article The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation / R.M. Peleshchak, O.V. Kuzyk, O.O. Dan'kiv, S.K. Guba // Condensed Matter Physics. — 2019. — Т. 22, № 1. — С. 13801: 1–15. — Бібліогр.: 26 назв. — англ. 1607-324X PACS: 81.07.Bc, 66.30.Lw DOI:10.5488/CMP.22.13801 arXiv:1903.11601 http://dspace.nbuv.gov.ua/handle/123456789/157479 en Condensed Matter Physics Інститут фізики конденсованих систем НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In the paper, the effect of the electric field on the conditions of formation and on the period of the surface superlattice of adatoms in n-GaAs semiconductor is investigated. It is established that in GaAs semiconductor, an
increase in the electric field strength, depending on the direction, leads to an increase or decrease of the critical
temperature (the critical concentration of adatoms), at which the formation of self-organized nanostructure is
possible. It is shown that in strongly alloyed n-GaAs semiconductor, an increase of the electric field strength
leads to a monotonous change (decrease or increase depending |
| format |
Article |
| author |
Peleshchak, R.M. Kuzyk, O.V. Dan'kiv, O.O. Guba, S.K. |
| spellingShingle |
Peleshchak, R.M. Kuzyk, O.V. Dan'kiv, O.O. Guba, S.K. The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation Condensed Matter Physics |
| author_facet |
Peleshchak, R.M. Kuzyk, O.V. Dan'kiv, O.O. Guba, S.K. |
| author_sort |
Peleshchak, R.M. |
| title |
The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation |
| title_short |
The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation |
| title_full |
The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation |
| title_fullStr |
The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation |
| title_full_unstemmed |
The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation |
| title_sort |
effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in gaas semiconductor under the action of laser irradiation |
| publisher |
Інститут фізики конденсованих систем НАН України |
| publishDate |
2019 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/157479 |
| citation_txt |
The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation / R.M. Peleshchak, O.V. Kuzyk, O.O. Dan'kiv, S.K. Guba // Condensed Matter Physics. — 2019. — Т. 22, № 1. — С. 13801: 1–15. — Бібліогр.: 26 назв. — англ. |
| series |
Condensed Matter Physics |
| work_keys_str_mv |
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2023-05-20T17:52:26Z |
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2023-05-20T17:52:26Z |
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