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Spin splitting of surface states in HgTe quantum wells

Spin splitting of surface states in HgTe quantum wells

We report on beating appearance in Shubnikov–de Haas oscillations in conduction band of 18–22 nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi level arising due to Rashba-like spin splitting of the first conduction subb...

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Bibliographic Details
Main Authors: Dobretsova, A.A., Kvon, Z.D., Krishtopenko, S.S., Mikhailov, N.N., Dvoretsky, S.A.
Format: Article
Language:Russian
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2019
Series:Физика низких температур
Subjects:
Спеціальний випуск. «XXII Уральська міжнародна зимова школа з фізики напівпровідників» (20–23 лютого, 2018)
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/175794
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http://dspace.nbuv.gov.ua/handle/123456789/175794

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