Effect of pulsed substrate biasing on macroparticle in vacuum arc
An analytical model of the interaction of macroparticle (MP) with vacuum arc plasma in plasma immersion ion implantation (PIII) is presented. The proposed model is based on combination of the theory of charge dynamics of MP and sheath model for PIII. In the framework of this model, the MP charge dyn...
Збережено в:
| Дата: | 2019 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2019
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| Назва видання: | Вопросы атомной науки и техники |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/195192 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of pulsed substrate biasing on macroparticle in vacuum arc / E.V. Romashchenko, A.A. Bizyukov, I.О. Girka // Problems of atomic science and technology. — 2019. — № 4. — С. 120-123. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | An analytical model of the interaction of macroparticle (MP) with vacuum arc plasma in plasma immersion ion implantation (PIII) is presented. The proposed model is based on combination of the theory of charge dynamics of MP and sheath model for PIII. In the framework of this model, the MP charge dynamics during voltage pulse as well as during interval between pulses is investigated. It is obtained that MP charge and MP behavior depend on pulsed bias parameters such as pulse duration, duty cycle and bias amplitude. It is shown that pulsed substrate biasing is effective method to control of the MPs in plasma processing. |
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