Intensification of the process of plasma-induction growing of large profiled tungsten single crystals

• Видавець: Національний науковий центр «Харківський фізико-технічний інститут» НАН України
• Дата: 2022
• Автори: Shapovalov, V.O., Gnizdylo, O.M., Yakusha, V.V., Nikitenko, Yu.O., Berdnikova, E.M., Khohlova, J.A.
• Формат: Стаття
• Мова: English
• Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2022
• Назва видання: Вопросы атомной науки и техники
• Теми: Pure materials and vacuum technologies
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/195819
• Цитувати: Intensification of the process of plasma-induction growing of large profiled tungsten single crystals / V.O. Shapovalov, O.M. Gnizdylo, V.V. Yakusha, Yu.O. Nikitenko, E.M. Berdnikova, J.A. Khohlova // Problems of Atomic Science and Technology. — 2022. — № 1. — С. 40-45. — Бібліогр.: 15 назв. — англ.

The structure of a profiled tungsten single crystal obtained by plasma-induction layer-by-layer growth on a single crystal seed crystal at different deposition rates is investigated. Investigated – microhardness, size of the subgrain structure, angles of misorientation of subgrains, the nature of the distribution of dislocations, etc. A complex of experimental methods of modern physical materials science was used, including light, scanning and transmission microdiffraction electron microscopy. It was found that the ingot is a single crystal body with a crystallographic orientation given by the seed crystal. An increase in the growth rate to 70 mm/min leads to an insignificant decrease in microhardness, refinement of the substructure with a uniform distribution of the dislocation density, which makes it possible to obtain tungsten single crystals with a single crystal structure at disorientation angles not exceeding 3°.