Pressure-induced transformations during annealing of silicon implanted with oxygen
Enhanced hydrostatic pressure (HP, up to 1.5 GPa) applied during annealing at up to 1570 K (HT) of silicon with oxygen introduced by implantation (Si:O), exerts pronounced effect on the transformation of oxygen admixture. In particular, HP affects the microstructure of Si:O and a creation of oxygen-...
Збережено в:
| Дата: | 2006 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
2006
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| Назва видання: | Физика и техника высоких давлений |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/70257 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Pressure-induced transformations during annealing of silicon implanted with oxygen / A. Misiuk, B.M. Efros // Физика и техника высоких давлений. — 2006. — Т. 16, № 4. — С. 49-63. — Бібліогр.: 40 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Enhanced hydrostatic pressure (HP, up to 1.5 GPa) applied during annealing at up to 1570 K (HT) of silicon with oxygen introduced by implantation (Si:O), exerts pronounced effect on the transformation of oxygen admixture. In particular, HP affects the microstructure of Si:O and a creation of oxygen-enriched (for implanted oxygen dose, D ≤ 1·10¹⁷ cm⁻²) or continuous (for D ≥ 6·10¹⁷ cm⁻²) buried SiO2 layers. Numerous treatment parameters contribute to the HP-induced phenomena in processed Si:O, among these are the HPaffected mobility and solubility of implanted oxygen as well as of silicon interstitials and of other implantation-induced defects and so the stability of oxygen clusters/precipitates; the misfit at the SiO₂/Si boundary is tuned by HP. |
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