Pressure-induced transformations during annealing of silicon implanted with oxygen
Enhanced hydrostatic pressure (HP, up to 1.5 GPa) applied during annealing at up to 1570 K (HT) of silicon with oxygen introduced by implantation (Si:O), exerts pronounced effect on the transformation of oxygen admixture. In particular, HP affects the microstructure of Si:O and a creation of oxygen-...
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| Видавець: | Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України |
|---|---|
| Дата: | 2006 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
2006
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| Назва видання: | Физика и техника высоких давлений |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/70257 |
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| Цитувати: | Pressure-induced transformations during annealing of silicon implanted with oxygen / A. Misiuk, B.M. Efros // Физика и техника высоких давлений. — 2006. — Т. 16, № 4. — С. 49-63. — Бібліогр.: 40 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-70257 |
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dspace |
| spelling |
irk-123456789-702572014-11-02T03:01:47Z Pressure-induced transformations during annealing of silicon implanted with oxygen Misiuk, A. Efros, B.M. Enhanced hydrostatic pressure (HP, up to 1.5 GPa) applied during annealing at up to 1570 K (HT) of silicon with oxygen introduced by implantation (Si:O), exerts pronounced effect on the transformation of oxygen admixture. In particular, HP affects the microstructure of Si:O and a creation of oxygen-enriched (for implanted oxygen dose, D ≤ 1·10¹⁷ cm⁻²) or continuous (for D ≥ 6·10¹⁷ cm⁻²) buried SiO2 layers. Numerous treatment parameters contribute to the HP-induced phenomena in processed Si:O, among these are the HPaffected mobility and solubility of implanted oxygen as well as of silicon interstitials and of other implantation-induced defects and so the stability of oxygen clusters/precipitates; the misfit at the SiO₂/Si boundary is tuned by HP. 2006 Article Pressure-induced transformations during annealing of silicon implanted with oxygen / A. Misiuk, B.M. Efros // Физика и техника высоких давлений. — 2006. — Т. 16, № 4. — С. 49-63. — Бібліогр.: 40 назв. — англ. 0868-5924 PACS: 61.10.−i, 61.72.Yx, 81.40.Vw http://dspace.nbuv.gov.ua/handle/123456789/70257 en Физика и техника высоких давлений Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Enhanced hydrostatic pressure (HP, up to 1.5 GPa) applied during annealing at up to 1570 K (HT) of silicon with oxygen introduced by implantation (Si:O), exerts pronounced effect on the transformation of oxygen admixture. In particular, HP affects the microstructure of Si:O and a creation of oxygen-enriched (for implanted oxygen dose, D ≤ 1·10¹⁷ cm⁻²) or continuous (for D ≥ 6·10¹⁷ cm⁻²) buried SiO2 layers. Numerous treatment parameters contribute to the HP-induced phenomena in processed Si:O, among these are the HPaffected mobility and solubility of implanted oxygen as well as of silicon interstitials and of other implantation-induced defects and so the stability of oxygen clusters/precipitates; the misfit at the SiO₂/Si boundary is tuned by HP. |
| format |
Article |
| author |
Misiuk, A. Efros, B.M. |
| spellingShingle |
Misiuk, A. Efros, B.M. Pressure-induced transformations during annealing of silicon implanted with oxygen Физика и техника высоких давлений |
| author_facet |
Misiuk, A. Efros, B.M. |
| author_sort |
Misiuk, A. |
| title |
Pressure-induced transformations during annealing of silicon implanted with oxygen |
| title_short |
Pressure-induced transformations during annealing of silicon implanted with oxygen |
| title_full |
Pressure-induced transformations during annealing of silicon implanted with oxygen |
| title_fullStr |
Pressure-induced transformations during annealing of silicon implanted with oxygen |
| title_full_unstemmed |
Pressure-induced transformations during annealing of silicon implanted with oxygen |
| title_sort |
pressure-induced transformations during annealing of silicon implanted with oxygen |
| publisher |
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/70257 |
| citation_txt |
Pressure-induced transformations during annealing of silicon implanted with oxygen / A. Misiuk, B.M. Efros // Физика и техника высоких давлений. — 2006. — Т. 16, № 4. — С. 49-63. — Бібліогр.: 40 назв. — англ. |
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Физика и техника высоких давлений |
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2023-10-18T18:58:08Z |
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