Structural, optical, and electrical properties of ZnO: al prepared by CVD

• Дата: 2011
• Автори: Pogrebnyak, A.D., Jamil, N.Y., Muhammed, A.K.M.
• Формат: Стаття
• Мова: English
• Опубліковано: Науковий фізико-технологічний центр МОН та НАН України 2011
• Назва видання: Физическая инженерия поверхности
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/76893
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Structural, optical, and electrical properties of ZnO: al prepared by CVD / A.D. Pogrebnyak, N.Y. Jamil, A.K.M. Muhammed // Физическая инженерия поверхности. — 2011. — Т. 9, № 3. — С. 244–249. — Бібліогр.: 5 назв. — англ.

In this paper we will prepared thin films from transparent conductive oxide(TCO) ZnO pure, and doped for various concentration of aluminum (4,8%) using technique chemical vapor deposition (CVD) at different substrates temperatures (400, 450, 500 °C) on glass substrates. The films were characterized by X-ray diffraction and UV spectrometer, pure ZnO films and (ZnO: Al) shows, a polycrystalline structure of the hexagonal wurtzite type, the diagnostics show preferred peaks for the growth of the crystal grains in the directions (002). The optical measurements have shown that the absorption edge is shifted towards the shortwave lengths which mean that the energy gap increases with the increase of aluminum concentration that we obtained Eg = 3.6 in case of 8% doping Al, and then we noticed the transmittance increases with increasing the substrate temperature and doping percentage with aluminum and the highest value was observed at 500 °C and (8%) doping. The electric conductivity of ZnO films doped with aluminum increases with the percentage of doping until the doping percentage of (4%), then starts to decrease with the increase in doping percentages at substrate temperatures (450 °C and 500 °C).