2025-02-22T09:45:07-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-78134%22&qt=morelikethis&rows=5
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Instabilities in binary compounds under irradiation

Instabilities in binary compounds under irradiation

A simulation of radiation-induced instability in binary semiconductor, such as GaAs, was fulfilled. The instability is connected with antisite defects accumulated. It was shown that the number of antisite defects in crystal under irradiation can significantly exceed their equilibrium concentration....

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Bibliographic Details
Main Authors: Mykhaylovskyy, V.V., Sugakov, V.I.
Format: Article
Language:English
Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2000
Series:Вопросы атомной науки и техники
Subjects:
Физика радиационных повреждений и явлений в твердых телах
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/78134
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http://dspace.nbuv.gov.ua/handle/123456789/78134

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